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Lookup NU author(s): Professor Nick Wright,
Dr Konstantin VasilevskiyORCiD,
Dr Alton Horsfall,
Dr Christopher Johnson
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The use of high-k dielectrics in 4H-SiC devices has recently attracted interest from the point of view of investigating whether such materials offer enhanced channel conduction when incorporated into 4H-SiC MOSFETS. This study shows that there are benefits and disadvantages of high-k dielectrics beyond just possible enhancement of channel carrier mobility. It is shown that incorporation of high-k dielectrics causes the peak electric field in the forward blocking state to be inside the semiconductor as opposed to the gate oxide of a conventional device. It is also shown that high-k devices are limited by reasons of constraints on cell geometry optimisation to voltages about ∼3kV and that parasitic capacitances within the high-k device are more sensitive to cell layout than in conventional oxide devices.
Author(s): Wright NG, Poolamai N, Vassilevski KV, Horsfall AB, Johnson CM
Publication type: Article
Publication status: Published
Journal: Materials Science Forum
Print publication date: 01/01/2004
ISSN (print): 0255-5476
ISSN (electronic): 1422-6375
Publisher: Trans Tech Publications Ltd
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