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Lookup NU author(s): Dr Sarah Olsen, Professor Anthony O'Neill
The dynamic threshold (DT) behavior of strained-Si (s-Si) n-type surface channel MOSFETs have been investigated for operating temperatures ranging from 10 to 300 K. The temperature dependence of the coefficients governing the body effect is presented, and their influence on the performance enhancement due to DT-mode operation is analyzed. The maximum transconductance is higher for the s-Si MOSFET in both operating modes over the whole temperature range. The relative improvement of the maximum transconductance between normal and DT-mode operation is found to be lower for the s-Si MOSFET (30%) compared to the Si control MOSFET (55%) over the whole temperature range. The subthreshold slope for the Si control follows the calculated behavior in both normal and DT-mode, and the subthreshold performance enhancement of the s-Si device due to DT-mode operation is closely approximated by the theoretical value (26%).
Author(s): Gaspari V, Fobelets K, Ding PW, Velazquez-Perez JW, Olsen SH, O'Neill AG, Zhang J
Publication type: Letter
Publication status: Published
Journal: IEEE Electron Device Letters
Year: 2004
Volume: 25
Issue: 5
Pages: 334-336
Print publication date: 01/05/2004
ISSN (print): 0741-3106
ISSN (electronic): 1558-0563
URL: http://dx.doi.org/10.1109/LED.2004.827286
DOI: 10.1109/LED.2004.827286
