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Electrical characterization of Niy(Si1-xGe x)1-y/Si1-xGex and NiSi/Si Schottky diodes

Lookup NU author(s): Arup Saha, Dr Sanatan Chattopadhyay, Goutan Dalapati


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A Schottky barrier diode has been fabricated by depositing Ni on strained-Si (grown on a graded relaxed Si1-xGex buffer layer) and characterized in the temperature range of 125K-300K for the determination of Schottky barrier height (SBH), ideality factor (n) and interface quality of the contact. The current-voltage (I-V) characteristics have been simulated using SEMICAD device simulator. To fit the experimental I-V results with the simulation, an interfacial layer and a series resistance were included in the model. The ideality factor decreases with an increase in temperature, while the barrier height increases. Transmission electron micrograph has been studied to interpret the chemical phase and morphology of the germanosilicide film.

Publication metadata

Author(s): Dalapati GK; Chattopadhyay S; Saha AR; Nandi SK; Maiti CK

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 24th International Conference on Microelectronics (MIEL)

Year of Conference: 2004

Pages: 401-404

Publisher: IEEE


DOI: 10.1109/ICMEL.2004.1314651

Library holdings: Search Newcastle University Library for this item

ISBN: 0780381661