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Lookup NU author(s): Arup Saha, Dr Sanatan Chattopadhyay, Goutan Dalapati
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A Schottky barrier diode has been fabricated by depositing Ni on strained-Si (grown on a graded relaxed Si1-xGex buffer layer) and characterized in the temperature range of 125K-300K for the determination of Schottky barrier height (SBH), ideality factor (n) and interface quality of the contact. The current-voltage (I-V) characteristics have been simulated using SEMICAD device simulator. To fit the experimental I-V results with the simulation, an interfacial layer and a series resistance were included in the model. The ideality factor decreases with an increase in temperature, while the barrier height increases. Transmission electron micrograph has been studied to interpret the chemical phase and morphology of the germanosilicide film.
Author(s): Dalapati GK; Chattopadhyay S; Saha AR; Nandi SK; Maiti CK
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 24th International Conference on Microelectronics (MIEL)
Year of Conference: 2004
Pages: 401-404
Publisher: IEEE
URL: http://dx.doi.org/10.1109/ICMEL.2004.1314651
DOI: 10.1109/ICMEL.2004.1314651
Library holdings: Search Newcastle University Library for this item
ISBN: 0780381661
