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Characteristics of thermally oxidized-Ti as a high-k gate dielectric on SiC metal-oxide-semiconductor devices

Lookup NU author(s): Dr Rajat Mahapatra, Nipapan Poolamai, Professor Nick Wright


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We have investigated the structural and electrical properties of thermally oxidized-Ti gate dielectric stacks on 4H-SiC films. In addition, SiO2 films were used as an interfacial layer between TiO2 films and 4H-SiC substrate. The TiO2 films were grown by oxidising evaporated Ti films at the temperature range of 700-1000°C for 1 hour. The films remain amorphous up to oxidation temperature of 900°C while oxidation at 1000°C transforms the film to be polycrystalline. X-ray photoelectron spectroscopy confirms the formation of stoichiometric TiO2 films. Capacitance-voltage characteristics exhibit the shift of flatband voltage attributing the presence of oxide charges. The TiO2/SiO2 4H-SiC capacitors in which Ti was oxidized at 800°C give the less fixed oxide charge density with moderate value of interface state density and less leakage current density. copyright The Electrochemical Society.

Publication metadata

Author(s): Mahapatra R, Poolamai N, Wright NG, Chakraborty AK, Coleman KS, Das K, Ray SK, Coleman PG, Burrows CP

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: ECS Transactions: 3rd International Symposium on High Dielectric Constant Gate Stacks, 208th Meeting of the Electrochemical Society

Year of Conference: 2005

Pages: 33-40

ISSN: 1938-5862

Publisher: Electrochemical Society, Inc.


DOI: 10.1149/1.2209253

Library holdings: Search Newcastle University Library for this item

ISBN: 19386737