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Lookup NU author(s): Dr Rajat Mahapatra, Nipapan Poolamai, Professor Nick Wright
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We have investigated the structural and electrical properties of thermally oxidized-Ti gate dielectric stacks on 4H-SiC films. In addition, SiO2 films were used as an interfacial layer between TiO2 films and 4H-SiC substrate. The TiO2 films were grown by oxidising evaporated Ti films at the temperature range of 700-1000°C for 1 hour. The films remain amorphous up to oxidation temperature of 900°C while oxidation at 1000°C transforms the film to be polycrystalline. X-ray photoelectron spectroscopy confirms the formation of stoichiometric TiO2 films. Capacitance-voltage characteristics exhibit the shift of flatband voltage attributing the presence of oxide charges. The TiO2/SiO2 4H-SiC capacitors in which Ti was oxidized at 800°C give the less fixed oxide charge density with moderate value of interface state density and less leakage current density. copyright The Electrochemical Society.
Author(s): Mahapatra R, Poolamai N, Wright NG, Chakraborty AK, Coleman KS, Das K, Ray SK, Coleman PG, Burrows CP
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: ECS Transactions: 3rd International Symposium on High Dielectric Constant Gate Stacks, 208th Meeting of the Electrochemical Society
Year of Conference: 2005
Pages: 33-40
ISSN: 1938-5862
Publisher: Electrochemical Society, Inc.
URL: http://dx.doi.org/10.1149/1.2209253
DOI: 10.1149/1.2209253
Library holdings: Search Newcastle University Library for this item
ISBN: 19386737
