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Lookup NU author(s): Arup Saha, Dr Sanatan Chattopadhyay, Goutan Dalapati
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Ni-germanosilicided Schottky barrier diode has been fabricated by annealing the deposited Ni film on strained-Si and characterized electrically in the temperature range of 125 K-300 K. The chemical phases and morphology of the germanosilicided films were studied by using scanning electron microscopy (SEM), cross-sectional transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). The Schottky barrier height (φb), ideality factor (n) and interface state density (Dit) have been determined from the current-voltage (I-V) and capacitance-voltage (C-V) characteristics. The current-voltage characteristics have also been simulated using SEMICAD device simulator to model the Schottky junction. An interfacial layer and a series resistance were included in the diode model to achieve a better agreement with the experimental data. It has been found that the barrier height values extracted from the I-V and C-V characteristics are different, indicating the existence of an in-homogeneous Schottky interface. Results are also compared with bulk-Si Schottky diode processed in the same run. The variation of electrical properties between the strained- and bulk-Si Schottky diodes has been attributed to the presence of out-diffused Ge at the interface. © 2004 Elsevier Ltd. All rights reserved.
Author(s): Saha AR, Chattopadhyay S, Dalapati GK, Nandi SK, Maiti CK
Publication type: Article
Publication status: Published
Journal: Microelectronics Reliability
Year: 2005
Volume: 45
Issue: 7-8
Pages: 1154-1160
ISSN (print): 0026-2714
ISSN (electronic): 1872-941X
Publisher: Pergamon
URL: http://dx.doi.org/10.1016/j.microrel.2004.08.012
DOI: 10.1016/j.microrel.2004.08.012
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