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Prediction of barrier inhomogeneities and carrier transport in Ni-silicided Schottky diode

Lookup NU author(s): Arup Saha, Dr Alton Horsfall, Dr Sanatan Chattopadhyay, Professor Nick Wright, Professor Anthony O'Neill


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Based on Quantum Mechanical (QM) carrier transport and the effects of interface states, a theoretical model has been developed to predict the anomalous current-voltage (I-V) characteristics of a non-ideal Ni-silicided Schottky diode at low temperatures. Physical parameters such as barrier height, ideality factor, series resistance and effective Richardson constant of a silicided Schottky diode were extracted from forward I-V characteristics and are subsequently used for the simulation of both forward and reverse I-V characteristics using a QM transport model in which the effects of interface state and bias dependent barrier reduction are incorporated. The present analysis indicates that the effects of barrier inhomogeneity caused by incomplete silicide formation at the junction and the interface states may change the conventional current transport process, leading to anomalous forward and reverse I-V characteristics for the Ni-silicided Schottky diode. © 2005 Elsevier B.V. All rights reserved.

Publication metadata

Author(s): Saha AR, Dimitriu CB, Horsfall AB, Chattopadhyay S, Wright NG, O'Neill AG, Maiti CK

Editor(s): Chandrasekhar, N; Boothroyd, CB

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 3rd International Conference on Materials for Advanced Technologies (ICMAT 2005)

Year of Conference: 2005

Pages: 3933-3937

ISSN: 0169-4332

Publisher: Applied Surface Science: Elsevier


DOI: 10.1016/j.apsusc.2005.09.026

Notes: Symposium L