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Characterization of thermally oxidized Ti/SiO₂ gate dielectric stacks on 4H-SiC substrate

Lookup NU author(s): Dr Rajat Mahapatra, Nipapan Poolamai, Dr Sanatan Chattopadhyay, Professor Nick Wright

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Abstract

The structural and electrical characteristics of thermally oxidized TiSi O2 gate dielectric stacks on 4H-SiC substrates have been investigated. X-ray photoelectron spectroscopy shows a good stoichiometry of Ti O2 films formed by thermal oxidation of evaporated Ti. No evidence of the formation of titanium silicide at the surface as well as in the interfacial layer was observed. Electrical measurements show, in particular, no signature of an increase in interface state density towards the conduction band edge of 4H-SiC. The improved leakage current with higher breakdown field of 11 MVcm makes Ti O2 Si O2 stacks a potential gate insulator for high-power SiC devices. © 2006 American Institute of Physics.

Publication metadata

Author(s): Mahapatra R, Poolamai N, Chattopadhyay S, Wright NG, Chakraborty AK, Coleman KS, Coleman PG, Burrows CP

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2006

Volume: 88

Issue: 7

ISSN (print): 0003-6951

ISSN (electronic): 1520-8850

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.2173713

DOI: 10.1063/1.2173713

Notes: Article no. 072910 3 pages

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