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Lookup NU author(s): Dr Alton Horsfall,
Professor Anthony O'Neill,
Professor Nick Wright,
Professor Steve BullORCiD
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This paper reports the first direct experimental measurement of electromigration-induced stress in aluminum interconnects using a series of micro-rotating stress sensors. The build up of stress gradients in interconnect metallization concomitant with back stress have been previously investigated theoretically, but experimental verification using optical or x-ray techniques has proven more difficult These initial results show a compressive stress gradient along the line, consistent with that predicted by conventional mass transport theory. The limited resolution of previous techniques restricts their ability to obtain a detailed characterization, whereas in principle this new technique can be scaled to the end of the International Technology Roadmap for Semiconductors. These preliminary findings suggest the present technique will provide a valuable tool for the investigation of back-end-of-line (BEOL) interconnect stress in the future. © 2006 IEEE.
Author(s): Wilson CJ, Horsfall AB, O'Neill AG, Wright NG, Wang K, Bull SJ, Terry JG, Stevenson JTM, Walton AJ
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: IEEE International Reliability Physics Symposium Proceedings
Year of Conference: 2006
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