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Rapid thermal oxidation of Ge-rich Si_1-xGe_x heterolayers

Lookup NU author(s): Goutan Dalapati, Dr Sanatan Chattopadhyay, Dr Yuriy Butenko, Professor Lidija Siller

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Abstract

Rapid thermal oxidation (RTO) of the Ge-rich (x=0.7) Si1-x Gex heterolayer is reported. In particular, the structural modifications of SiGe films during oxidation process and the dependence of the oxidation kinetics on Ge content, oxidation temperature, and oxide thickness have been studied. The segregation mechanism of Ge at the oxideSiGe interface is discussed. Interface properties of the RTO-grown oxides studied using high-frequency capacitance-voltage (C-V) characteristics of metal-oxide-semiconductor capacitors are also reported.

Publication metadata

Author(s): Bera MK, Chakraborty S, Das R, Dalapati GK, Chattopadhyay S, Samanta SK, Yoo WJ, Chakraborty AK, Butenko Y, Siller L, Hunt MRC, Saha S, Maiti CK

Publication type: Article

Publication status: Published

Journal: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Year: 2006

Volume: 24

Issue: 1

Pages: 84-90

ISSN (print): 0734-2101

ISSN (electronic): 1071-8028

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1116/1.2137329

DOI: 10.1116/1.2137329

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