Browse by author
Lookup NU author(s): Dr Alton Horsfall,
Professor Steve Bull,
Professor Anthony O'Neill
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
As ULSI dimensions shrink, conventional Ta/TaN barriers will not meet the future demands for ULSI interconnects, i.e. thin conformal layer without overhangs. In this paper, we have compared the material properties of TaN/Ta barriers with Ta only and W based barriers by means of XRD, AFM, Stress and SEM imaging. We found that using a conformal CVD W based barriers has great potential for future ULSI interconnects. It grain size and tensile stress improve resistance to both electromigration and stress migration, extending conductor lifetime. © 2007 Elsevier B.V. All rights reserved.
Author(s): Wang K, Horsfall A, Cuthbertson A, Bull S, O'Neill A
Publication type: Article
Publication status: Published
Journal: Microelectronic Engineering
Print publication date: 01/11/2007
ISSN (print): 0167-9317
ISSN (electronic): 1873-5568
Publisher: Elsevier BV
Altmetrics provided by Altmetric