Toggle Main Menu Toggle Search

Open Access padlockePrints

Comparative study of novel barrier layers in ULSI copper interconnects

Lookup NU author(s): Dr Alton Horsfall, Professor Steve BullORCiD, Professor Anthony O'Neill


Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


As ULSI dimensions shrink, conventional Ta/TaN barriers will not meet the future demands for ULSI interconnects, i.e. thin conformal layer without overhangs. In this paper, we have compared the material properties of TaN/Ta barriers with Ta only and W based barriers by means of XRD, AFM, Stress and SEM imaging. We found that using a conformal CVD W based barriers has great potential for future ULSI interconnects. It grain size and tensile stress improve resistance to both electromigration and stress migration, extending conductor lifetime. © 2007 Elsevier B.V. All rights reserved.

Publication metadata

Author(s): Wang K, Horsfall A, Cuthbertson A, Bull S, O'Neill A

Publication type: Article

Publication status: Published

Journal: Microelectronic Engineering

Year: 2007

Volume: 84

Issue: 11

Pages: 2486-2490

Print publication date: 01/11/2007

ISSN (print): 0167-9317

ISSN (electronic): 1873-5568

Publisher: Elsevier BV


DOI: 10.1016/j.mee.2007.05.018


Altmetrics provided by Altmetric