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Comparative study of novel barrier layers in ULSI copper interconnects

Lookup NU author(s): Dr Alton Horsfall, Professor Steve BullORCiD, Professor Anthony O'Neill

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Abstract

As ULSI dimensions shrink, conventional Ta/TaN barriers will not meet the future demands for ULSI interconnects, i.e. thin conformal layer without overhangs. In this paper, we have compared the material properties of TaN/Ta barriers with Ta only and W based barriers by means of XRD, AFM, Stress and SEM imaging. We found that using a conformal CVD W based barriers has great potential for future ULSI interconnects. It grain size and tensile stress improve resistance to both electromigration and stress migration, extending conductor lifetime. © 2007 Elsevier B.V. All rights reserved.

Publication metadata

Author(s): Wang K, Horsfall A, Cuthbertson A, Bull S, O'Neill A

Publication type: Article

Publication status: Published

Journal: Microelectronic Engineering

Year: 2007

Volume: 84

Issue: 11

Pages: 2486-2490

Print publication date: 01/11/2007

ISSN (print): 0167-9317

ISSN (electronic): 1873-5568

Publisher: Elsevier BV

URL: http://dx.doi.org/10.1016/j.mee.2007.05.018

DOI: 10.1016/j.mee.2007.05.018

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