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Antimony for n -type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?

Lookup NU author(s): Dr Nick Bennett, Professor Nick Cowern

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Abstract

The creation of stable, highly conductive ultrashallow junctions in strained Si is a key requirement for future Si based devices. It is shown that in the presence of tensile strain, Sb becomes a strong contender to replace As as the dopant of choice due to advantages in junction depth, junction steepness, and crucially, sheet resistance. While 0.7% strain reduces resistance for both As and Sb, a result of enhanced electron mobility, the reduction is significantly larger for Sb due to an increase in donor activation. Differential Hall and secondary-ion mass spectroscopy measurements suggest this to be a consequence of a strain-induced Sb solubility enhancement following epitaxial regrowth, increasing Sb solubility in Si to levels approaching 1021 cm-3. Advantages in junction depth, junction steepness, and dopant activation make Sb an interesting alternative to As for ultrashallow doping in strain-engineered complementary metal-oxide semiconductor devices. © 2008 American Vacuum Society.

Publication metadata

Author(s): Bennett NS, Smith AJ, Gwilliam RM, Webb RP, Sealy BJ, Cowern NEB, O'Reilly L, McNally PJ

Publication type: Article

Publication status: Published

Journal: Journal of Vacuum Science & Technology B

Year: 2008

Volume: 26

Issue: 1

Pages: 391-395

Print publication date: 01/01/2008

ISSN (print): 1071-1023

ISSN (electronic): 2166-2754

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1116/1.2816929

DOI: 10.1116/1.2816929

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