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Lookup NU author(s): Dr Barry Gallacher, Professor Anthony O'Neill, Professor Steve BullORCiD, Dr Alton Horsfall
Process-induced stress and its deleterious effects on interconnect reliability become increasingly severe as current densities escalate at scaled geometries. Accurate and reliable measurements of stress are paramount to understand the failure mechanisms in advanced interconnect schemes, the control of process technologies, the integration of new materials, and the reliability-driven architecture design. An analytical model of a recently developed passive strain sensor that is suitable for predicting process-induced stress in advanced interconnect technology is presented. This passive strain sensor is scalable for future interconnect geometries predicted by the International Technology Roadmap for Semiconductors. The model is developed using complementary energy principles and is compared against the available experimental data on aluminum interconnect. Agreement between the model and the experiment is shown to be within 5%. The use of the developed model enables critical design parameters to be identified and optimized for any level of stress. Furthermore, as the model is scalable, it will facilitate the design of such sensors for future interconnect geometries. © 2008 IEEE.
Author(s): Gallacher B, O'Neill A, Bull S, Wilson C, Horsfall A
Publication type: Article
Publication status: Published
Journal: IEEE Transactions on Device and Materials Reliability
Year: 2008
Volume: 8
Issue: 1
Pages: 174-181
Print publication date: 01/03/2008
ISSN (print): 1530-4388
ISSN (electronic): 1558-2574
Publisher: IEEE
URL: http://dx.doi.org/10.1109/TDMR.2007.912272
DOI: 10.1109/TDMR.2007.912272
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