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Optimisation of implanted guard-ring terminations in 4H-SiC Schottky diodes

Lookup NU author(s): Dr Alton Horsfall, Dr Konstantin Vasilevskiy, Dr Christopher Johnson, Professor Nick Wright, Professor Anthony O'Neill

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Abstract

The influence of geometry of boron implanted guard rings on the characteristics of Schottky diodes on 4H-SiC has been investigated. Results suggest, that whilst the breakdown voltage can be increased, the creation of damage from the implantation process and the additional processing requirements serve to increase the leakage current through the device to unacceptable levels. The leakage current through the terminated diodes is found to be proportional to the diode contact area. At high temperatures the leakage current density of the terminated diodes is equal to unterminated devices suggesting a common mechanism.


Publication metadata

Author(s): Horsfall AB, Vassilevski KV, Johnson CM, Wright NG, O'Neill AG, Gwilliam RM

Editor(s): Yoshida, S., Nishino, S., Harima, H., Kimoto, T.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: International Conference on Silicon Carbide and Related Materials

Year of Conference: 2002

Pages: 1149-1152

ISSN: 0255-5476

Publisher: Trans Tech Publications Ltd.

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.389-393.1149

DOI: 10.4028/www.scientific.net/MSF.389-393.1149

Library holdings: Search Newcastle University Library for this item

ISBN: 9780878498949


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