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Lookup NU author(s): Dr Alton Horsfall,
Dr Konstantin VasilevskiyORCiD,
Dr Christopher Johnson,
Professor Nick Wright,
Professor Anthony O'Neill
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The influence of geometry of boron implanted guard rings on the characteristics of Schottky diodes on 4H-SiC has been investigated. Results suggest, that whilst the breakdown voltage can be increased, the creation of damage from the implantation process and the additional processing requirements serve to increase the leakage current through the device to unacceptable levels. The leakage current through the terminated diodes is found to be proportional to the diode contact area. At high temperatures the leakage current density of the terminated diodes is equal to unterminated devices suggesting a common mechanism.
Author(s): Horsfall AB, Vassilevski KV, Johnson CM, Wright NG, O'Neill AG, Gwilliam RM
Editor(s): Yoshida, S., Nishino, S., Harima, H., Kimoto, T.
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: International Conference on Silicon Carbide and Related Materials
Year of Conference: 2002
Publisher: Trans Tech Publications Ltd.
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