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4H-SiC Schottky diodes with high on/off current ratio

Lookup NU author(s): Dr Konstantin Vasilevskiy, Dr Alton Horsfall, Dr Christopher Johnson, Professor Nick Wright, Professor Anthony O'Neill

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Abstract

4H-SiC Schottky diodes having a main titanium contact surrounded by a narrow ring-shaped nickel contact have been fabricated. The diodes display low reverse leakage currents, corresponding to those observed in nickel Schottky contacts, and low forward barrier heights, corresponding to titanium diodes. The diodes exhibit an unrecoverable breakdown at voltages up to 1250 V and a high on/off current ratio (at 1V/-500V) of about 5-10(8).


Publication metadata

Author(s): Vassilevski KV, Horsfall AB, Johnson CM, Wright NG, O'Neill AG

Editor(s): Yoshida, S., Nishino, S., Harima, H., Kimoto, T.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: International Conference on Silicon Carbide and Related Materials

Year of Conference: 2002

Pages: 1145-1148

ISSN: 0255-5476

Publisher: Trans Tech Publications Ltd.

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.389-393.1145

DOI: 10.4028/www.scientific.net/MSF.389-393.1145

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science Forum

ISBN: 9780878498949


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