Browse by author
Lookup NU author(s): Dr Konstantin VasilevskiyORCiD,
Dr Alton Horsfall,
Dr Christopher Johnson,
Professor Nick Wright,
Professor Anthony O'Neill
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
4H-SiC Schottky diodes having a main titanium contact surrounded by a narrow ring-shaped nickel contact have been fabricated. The diodes display low reverse leakage currents, corresponding to those observed in nickel Schottky contacts, and low forward barrier heights, corresponding to titanium diodes. The diodes exhibit an unrecoverable breakdown at voltages up to 1250 V and a high on/off current ratio (at 1V/-500V) of about 5-10(8).
Author(s): Vassilevski KV, Horsfall AB, Johnson CM, Wright NG, O'Neill AG
Editor(s): Yoshida, S., Nishino, S., Harima, H., Kimoto, T.
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: International Conference on Silicon Carbide and Related Materials
Year of Conference: 2002
Publisher: Trans Tech Publications Ltd.
Library holdings: Search Newcastle University Library for this item
Series Title: Materials Science Forum