Toggle Main Menu Toggle Search

Open Access padlockePrints

Characterisation of the high temperature performance of 4H-SiC Schottky barrier diodes

Lookup NU author(s): Cezar Blasciuc-Dimitriu, Dr Alton Horsfall, Dr Konstantin VasilevskiyORCiD, Dr Christopher Johnson, Professor Nick Wright, Professor Anthony O'Neill

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Abstract

Three approaches to the modelling of the temperature and voltage dependence of the forward and reverse bias characteristics of 4H-SiC Ti Schottky Diodes are compared. 4H-SiC Schottky barrier diodes (SD) were fabricated and subjected to forward and reverse bias I-V characterisation at temperatures ranging from ambient to 300degreesC. Device parameters (barrier height, ideality factor) and the Richardson constant - area product (A(.)A**) were extracted from the forward characteristics using a modified Norde technique. Comparisons were made using extracted parameters for both forward and reverse bias conditions between three models: thermionic emission theory (TE), thermionic emission with barrier lowering (TEBIL) theory and thermionic field emission (TFE) theory. It is found that both TEBIL and TFE can provide a close fit for both forward and reverse conditions from a single set of parameters.


Publication metadata

Author(s): Blasciuc-Dimitriu C, Horsfall AB, Vassilevski KV, Johnson CM, Wright NG, O'Neill AG

Editor(s): Bergman, P., Janzen, E.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Silicon Carbide and Related Materials: 4th European Conference on Silicon Carbide and Related Materials (ECSCRM)

Year of Conference: 2002

Pages: 823-826

ISSN: 0255-5476

Publisher: Trans Tech Publications Ltd

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.433-436.823

DOI: 10.4028/www.scientific.net/MSF.433-436.823

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science Forum

ISBN:


Share