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Characterisation of the high temperature performance of 4H-SiC Schottky barrier diodes

Lookup NU author(s): Cezar Blasciuc-Dimitriu, Dr Alton Horsfall, Dr Konstantin VasilevskiyORCiD, Dr Christopher Johnson, Professor Nick Wright, Professor Anthony O'Neill


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Three approaches to the modelling of the temperature and voltage dependence of the forward and reverse bias characteristics of 4H-SiC Ti Schottky Diodes are compared. 4H-SiC Schottky barrier diodes (SD) were fabricated and subjected to forward and reverse bias I-V characterisation at temperatures ranging from ambient to 300degreesC. Device parameters (barrier height, ideality factor) and the Richardson constant - area product (A(.)A**) were extracted from the forward characteristics using a modified Norde technique. Comparisons were made using extracted parameters for both forward and reverse bias conditions between three models: thermionic emission theory (TE), thermionic emission with barrier lowering (TEBIL) theory and thermionic field emission (TFE) theory. It is found that both TEBIL and TFE can provide a close fit for both forward and reverse conditions from a single set of parameters.

Publication metadata

Author(s): Blasciuc-Dimitriu C, Horsfall AB, Vassilevski KV, Johnson CM, Wright NG, O'Neill AG

Editor(s): Bergman, P., Janzen, E.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Silicon Carbide and Related Materials: 4th European Conference on Silicon Carbide and Related Materials (ECSCRM)

Year of Conference: 2002

Pages: 823-826

ISSN: 0255-5476

Publisher: Trans Tech Publications Ltd


DOI: 10.4028/

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science Forum