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Lookup NU author(s): Dr Sarah Olsen,
Professor Anthony O'Neill
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The 3D morphology of the gate electrode in a Si-Ge MOSFET device has been determined by 3D FIB tomographic analysis. Sequential 2D FIB sectioning, imaging, and computer reconstruction enables the gate electrode shape and location with respect to the neighbouring source and drain to be determined in 3D.
Author(s): Inkson BJ, Olsen S, Norris DJ, O'Neill AG, Mobus G
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Conference on Microscopy of Semiconducting Materials
Year of Conference: 2003
Publisher: IOP Publishing
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