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3D determination of a MOSFET gate morphology by FIB tomography

Lookup NU author(s): Dr Sarah Olsen, Professor Anthony O'Neill

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Abstract

The 3D morphology of the gate electrode in a Si-Ge MOSFET device has been determined by 3D FIB tomographic analysis. Sequential 2D FIB sectioning, imaging, and computer reconstruction enables the gate electrode shape and location with respect to the neighbouring source and drain to be determined in 3D.

Publication metadata

Author(s): Inkson BJ, Olsen S, Norris DJ, O'Neill AG, Mobus G

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Conference on Microscopy of Semiconducting Materials

Year of Conference: 2003

Pages: 611-616

ISSN: 0951-3248

Publisher: IOP Publishing

Library holdings: Search Newcastle University Library for this item

ISBN: 0750309792

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