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Micro-Raman Study of Anomalous Dopant-Induced Behaviour in Ultra-Shallow As and Sb Doped Strained Si

Lookup NU author(s): Dr Nick Bennett, Professor Nick Cowern


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We use UV micro-Raman spectroscopy to characterise the impact of a low energy (2keV) Sb or As ion implantation into a thin strained Si layer on the crystalline quality and the resultant stress in the strained Si. A broadening of the Si Raman peak and red-shift of the peak position is indicative of confinement effects resulting from partial amorphisation of the strained Si layer during ion implantation. Following RTA at 6000C and 7000C a further increase in the red shift of the Si Raman peak for both Sb and As-doped strained Si layers is measured before reducing slightly at 8000C. This anomalous behaviour results from a number of contributing factors including stress, confinement and carrier concentration effects. The possibility of using UV micro-Raman as a non-destructive means of extracting carrier concentration information with high spatial resolution is investigated by correlating the Raman shifts with measurements of the sheet carrier concentration.

Publication metadata

Author(s): O'Reilly L, McNally PJ, Bennett NS, Sealy BJ, Cowern NEB, Lankinen A

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Unknown

Conference Name: INSIGHT

Year of Conference: 2007