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Lookup NU author(s): Dr Sylvie Ortolland,
Dr Christopher Johnson,
Professor Nick Wright,
Professor Anthony O'Neill
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In this paper, the optimisation procedure for a static induction transistor (SIT) in silicon carbide is described and its application in a typical RF heating circuit is presented. A field plate edge termination is optimised for a 10 mu m thick epitaxial layer with doping in the range 10(15) cm(-3) to 10(16) cm(-3). Results show a breakdown voltage of 1280 V, corresponding to 68% of the theoretical value. For the chosen application an epitaxial layer doping level of 5 x 10(15) cm(-3) is revealed to offer the best compromise. This allows pinch off of drain voltages exceeding 600 V from a 20 V gate drive whilst achieving a current density of 250 A cm(-2) at an on-state voltage of less than 1 V. Transient simulations are performed for a series load resonant converter with a switching frequency of 27.12 MHz. The results emphasise the suitability of the device for RF heating applications. (C) 1999 Elsevier Science S.A. All rights reserved.
Author(s): Ortolland S, Johnson CM, Wright NG, Morrison DJ, O'Neill AG
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 2nd European Conference on Silicon Carbide and Related Materials (ECSCRM)
Year of Conference: 1999
Publisher: Elsevier SA
Library holdings: Search Newcastle University Library for this item
Series Title: Materials Science and Engineering B: Advanced Functional Solid-state Materials