Toggle Main Menu Toggle Search

Open Access padlockePrints

Analysis of gate leakage characteristics in strained Si MOSFETs

Lookup NU author(s): Liang Yan, Dr Sarah Olsen, Dr Mehdi Kanoun, Rimoon Agaiby, Goutan Dalapati, Professor Anthony O'Neill

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Publication metadata

Author(s): Yan L, Olsen S, Kanoun M, Al-Araimi M, Agaiby R, Dalapati G, O'Neill A

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 210th ECS Meeting

Year of Conference: 2006

Publisher: The Electrochemical Society

URL: http://www.electrochem.org/meetings/biannual/210/210.htm

Notes: Abstract 1501


Share