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Phase Inhomogeneity and Electrical Characteristics of Nickel Silicide Schottky Contacts Formed on 4H-SiC

Lookup NU author(s): Irina Nikitina, Dr Konstantin VasilevskiyORCiD, Dr Alton Horsfall, Professor Nick Wright, Professor Anthony O'Neill, Dr Christopher Johnson


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Nickel silicide Schottky contacts were formed on 4H-SiC by consecutive deposition of a titanium adhesion layer, 4 nm thick, and nickel, 100 nm thick. followed by annealing, at temperatures from 600 to 750 degrees C. It was found that contacts with barrier heights of 1.45 eV, consisting mainly of NiSi phase, formed in the 600-660 degrees C temperature range, while annealing at around 750 degrees C led to the formation of Ni2Si phase with barrier heights of 1.1 eV. Annealing at intermediate temperatures resulted in the nucleation of Ni2Si grains embedded in the NiSi film which were directly observed by micro-Raman mapping. It was concluded that the thermodynamically unfavourable NiSi phase appeared in the 600-660 degrees C temperature range due to the fact that the solid state chemical reaction between Ni and SiC at these temperatures is controlled by nickel diffusion through the titanium barrier.

Publication metadata

Author(s): Nikitina I, Vassilevski K, Horsfall A, Wright N, O'Neill AG, Ray SK, Johnson CM

Editor(s): Pérez-Tomás, A., Godignon, P., Vellvehí, M., Brosselard, P.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 7th European Conference on Silicon Carbide and Related Materials (ECSCRM 2008)

Year of Conference: 2008

Pages: 577-580

ISSN: 0255-5476

Publisher: Materials Science Forum: Trans Tech Publications Ltd


DOI: 10.4028/

Library holdings: Search Newcastle University Library for this item

ISBN: 9780878493340