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Lookup NU author(s): Irina Nikitina,
Dr Konstantin Vasilevskiy,
Dr Alton Horsfall,
Professor Nick Wright,
Professor Anthony O'Neill,
Dr Christopher Johnson
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Nickel silicide Schottky contacts were formed on 4H-SiC by consecutive deposition of a titanium adhesion layer, 4 nm thick, and nickel, 100 nm thick. followed by annealing, at temperatures from 600 to 750 degrees C. It was found that contacts with barrier heights of 1.45 eV, consisting mainly of NiSi phase, formed in the 600-660 degrees C temperature range, while annealing at around 750 degrees C led to the formation of Ni2Si phase with barrier heights of 1.1 eV. Annealing at intermediate temperatures resulted in the nucleation of Ni2Si grains embedded in the NiSi film which were directly observed by micro-Raman mapping. It was concluded that the thermodynamically unfavourable NiSi phase appeared in the 600-660 degrees C temperature range due to the fact that the solid state chemical reaction between Ni and SiC at these temperatures is controlled by nickel diffusion through the titanium barrier.
Author(s): Nikitina I, Vassilevski K, Horsfall A, Wright N, O'Neill AG, Ray SK, Johnson CM
Editor(s): Pérez-Tomás, A., Godignon, P., Vellvehí, M., Brosselard, P.
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 7th European Conference on Silicon Carbide and Related Materials (ECSCRM 2008)
Year of Conference: 2008
Publisher: Materials Science Forum: Trans Tech Publications Ltd
Library holdings: Search Newcastle University Library for this item