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Lookup NU author(s): Dr Konstantin Vasilevskiy,
Dr Alton Horsfall,
Professor Nick Wright,
Professor Anthony O'Neill,
Dr Christopher Johnson
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Buried gate static induction transistors (BGSH's) were fabricated oil commercial 4H-SiC wafer with 20 mu.m thick n-type epilayer having a net donor density of 0.7x 10(15) cm(-3). Buried gate regions were formed by the selective implantation of high energy (up to 2 MeV) aluminium performed at 600 degrees C. Nitrogen was implanted at temperature of 400 degrees C to form a heavily doped blanket source region. Post-implantation annealing was carried out at the atmospheric pressure ill argon using a graphite capping layer. Fabricated normally-on devices With Source contact diameter 2, of 0.2 min were tested at temperatures Lip to 500 degrees C and current densities Lip to 270 A/cm(2). The specific on-resistance of a completely open 4H-SiC BGSIT was 34 m Omega.cm(2) and showed a thermally activated behaviour at temperatures up to 500 degrees C.
Author(s): Vassilevski K, Nikitina I, Horsfall A, Wright N, O'Neill AG, Gwilliam R, Johnson CM
Editor(s): Pérez-Tomás, A., Godignon, P., Vellvehí, M., Brosselard, P,
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 7th European Conference on Silicon Carbide and Related Materials (ECSCRM 2008)
Year of Conference: 2009
Publisher: Materials Science Forum: Trans Tech Publications Ltd.
Library holdings: Search Newcastle University Library for this item