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Silicon Carbide Static Induction Transistor with Implanted Buried Gate

Lookup NU author(s): Dr Konstantin Vasilevskiy, Irina Nikitina, Dr Alton Horsfall, Professor Nick Wright, Professor Anthony O'Neill, Dr Christopher Johnson

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Abstract

Buried gate static induction transistors (BGSH's) were fabricated oil commercial 4H-SiC wafer with 20 mu.m thick n-type epilayer having a net donor density of 0.7x 10(15) cm(-3). Buried gate regions were formed by the selective implantation of high energy (up to 2 MeV) aluminium performed at 600 degrees C. Nitrogen was implanted at temperature of 400 degrees C to form a heavily doped blanket source region. Post-implantation annealing was carried out at the atmospheric pressure ill argon using a graphite capping layer. Fabricated normally-on devices With Source contact diameter 2, of 0.2 min were tested at temperatures Lip to 500 degrees C and current densities Lip to 270 A/cm(2). The specific on-resistance of a completely open 4H-SiC BGSIT was 34 m Omega.cm(2) and showed a thermally activated behaviour at temperatures up to 500 degrees C.


Publication metadata

Author(s): Vassilevski K, Nikitina I, Horsfall A, Wright N, O'Neill AG, Gwilliam R, Johnson CM

Editor(s): Pérez-Tomás, A., Godignon, P., Vellvehí, M., Brosselard, P,

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 7th European Conference on Silicon Carbide and Related Materials (ECSCRM 2008)

Year of Conference: 2009

Pages: 735-738

ISSN: 0255-5476

Publisher: Materials Science Forum: Trans Tech Publications Ltd.

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.735

DOI: 10.4028/www.scientific.net/MSF.615-617.735

Library holdings: Search Newcastle University Library for this item

ISBN: 9780878493340


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