Toggle Main Menu Toggle Search

Open Access padlockePrints

Silicon Carbide Static Induction Transistor with Implanted Buried Gate

Lookup NU author(s): Dr Konstantin VasilevskiyORCiD, Irina Nikitina, Dr Alton Horsfall, Professor Nick Wright, Professor Anthony O'Neill, Dr Christopher Johnson


Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Buried gate static induction transistors (BGSH's) were fabricated oil commercial 4H-SiC wafer with 20 mu.m thick n-type epilayer having a net donor density of 0.7x 10(15) cm(-3). Buried gate regions were formed by the selective implantation of high energy (up to 2 MeV) aluminium performed at 600 degrees C. Nitrogen was implanted at temperature of 400 degrees C to form a heavily doped blanket source region. Post-implantation annealing was carried out at the atmospheric pressure ill argon using a graphite capping layer. Fabricated normally-on devices With Source contact diameter 2, of 0.2 min were tested at temperatures Lip to 500 degrees C and current densities Lip to 270 A/cm(2). The specific on-resistance of a completely open 4H-SiC BGSIT was 34 m and showed a thermally activated behaviour at temperatures up to 500 degrees C.

Publication metadata

Author(s): Vassilevski K, Nikitina I, Horsfall A, Wright N, O'Neill AG, Gwilliam R, Johnson CM

Editor(s): Pérez-Tomás, A., Godignon, P., Vellvehí, M., Brosselard, P,

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 7th European Conference on Silicon Carbide and Related Materials (ECSCRM 2008)

Year of Conference: 2009

Pages: 735-738

ISSN: 0255-5476

Publisher: Materials Science Forum: Trans Tech Publications Ltd.


DOI: 10.4028/

Library holdings: Search Newcastle University Library for this item

ISBN: 9780878493340