Silicon Carbide Static Induction Transistor with Implanted Buried Gate

Vassilevski, K; Nikitina, I; Horsfall, A; Wright, N; O'Neill, AG; Gwilliam, R; Johnson, CM

doi:10.4028/www.scientific.net/MSF.615-617.735

Silicon Carbide Static Induction Transistor with Implanted Buried Gate

Lookup NU author(s): Dr Konstantin Vasilevskiy ORCiD, Irina Nikitina, Dr Alton Horsfall, Professor Nick Wright, Professor Anthony O'Neill, Dr Christopher Johnson

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Abstract

Buried gate static induction transistors (BGSH's) were fabricated oil commercial 4H-SiC wafer with 20 mu.m thick n-type epilayer having a net donor density of 0.7x 10(15) cm(-3). Buried gate regions were formed by the selective implantation of high energy (up to 2 MeV) aluminium performed at 600 degrees C. Nitrogen was implanted at temperature of 400 degrees C to form a heavily doped blanket source region. Post-implantation annealing was carried out at the atmospheric pressure ill argon using a graphite capping layer. Fabricated normally-on devices With Source contact diameter 2, of 0.2 min were tested at temperatures Lip to 500 degrees C and current densities Lip to 270 A/cm(2). The specific on-resistance of a completely open 4H-SiC BGSIT was 34 m Omega.cm(2) and showed a thermally activated behaviour at temperatures up to 500 degrees C.