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Direct measurement of MOSFET channel strain by means of backside etching and Raman spectroscopy on long-channel devices

Lookup NU author(s): Rouzet Agaiby, Dr Sarah OlsenORCiD, Professor Anthony O'Neill

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This is the final published version of an article that has been published in its final definitive form by IEEE, 2010.

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Publication metadata

Author(s): Agaiby RMB, Olsen SH, Eneman G, Simoen E, Augendre E, O'Neill AG

Publication type: Article

Publication status: Published

Journal: IEEE Electron Device Letters

Year: 2010

Volume: 31

Issue: 5

Pages: 419-421

Print publication date: 29/03/2010

Date deposited: 25/05/2010

ISSN (print): 0741-3106

ISSN (electronic): 1558-0563

Publisher: IEEE

URL: http://dx.doi.org/10.1109/LED.2010.2043496

DOI: 10.1109/LED.2010.2043496

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