Rouzet Agaiby Dr Sarah Olsen Professor Anthony O'Neill
| Direct measurement of MOSFET channel strain by means of backside etching and Raman spectroscopy on long-channel devices | 2010 |
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Rouzet Agaiby Dr Sarah Olsen Dr Piotr Dobrosz Professor Steve Bull Professor Anthony O'Neill et al. | Nanometer Scale Strain Profiling Through Si-SiGe Heterolayers | 2008 |
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Rouzet Agaiby Dr Sarah Olsen Dr Piotr Dobrosz Professor Steve Bull Professor Anthony O'Neill et al. | Nanometer strain profiling through Si/SiGe quantum layers | 2008 |
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Dr Sarah Olsen Dr Piotr Dobrosz Rouzet Agaiby Dr Yuk Tsang Layi Alatise et al. | Nanoscale strain characterisation for ultimate CMOS and beyond | 2008 |
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Dr Sarah Olsen Dr Piotr Dobrosz Rouzet Agaiby Dr Yuk Tsang Layi Alatise et al. | Nanoscale strain characterisation for ultimate CMOS and beyond | 2008 |
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Dr Piotr Dobrosz Dr Sarah Olsen Professor Steve Bull Dr Yuk Tsang Rouzet Agaiby et al. | Nanoscale strain characterisation in patterned SSOI structures | 2008 |
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Professor Anthony O'Neill Rouzet Agaiby Dr Sarah Olsen Yang Yang
| Reduced self-heating by strained silicon substrate engineering | 2008 |
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Dr Sarah Olsen John Varzgar Dr Enrique Escobedo-Cousin Rouzet Agaiby Dr Piotr Dobrosz et al. | Strain engineering for high mobility channels | 2008 |
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Professor Anthony O'Neill Dr Sarah Olsen Yang Yang Rouzet Agaiby
| [invited] Engineering Self-Heating by Strained Silicon Technology | 2007 |
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Rouzet Agaiby Yang Yang Dr Sarah Olsen Professor Anthony O'Neill
| Quantifying self-heating effects in strained Si MOSFETs with scaling | 2007 |
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Professor Anthony O'Neill Dr Sarah Olsen Yang Yang Rouzet Agaiby
| Reduced self-heating by strained Si substrate engineering | 2007 |
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Professor Anthony O'Neill Dr Sarah Olsen Yang Yang Rouzet Agaiby
| Reduced Self-Heating by Strained Silicon Substrate Engineering | 2007 |
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Dr Sarah Olsen Rouzet Agaiby Dr Enrique Escobedo-Cousin Professor Anthony O'Neill
| Strained Si/SiGe MOS technology: improving gate dielectric integrity | 2007 |
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Dr Enrique Escobedo-Cousin Dr Sarah Olsen Professor Anthony O'Neill Layi Alatise Rouzet Agaiby et al. | Strained Si/strained SiGe/relaxed SiGe structures: identifying roughness due to compressed SiGe and its impact on high mobility MOSFETs | 2007 |
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Dr Yuk Tsang Dr Sanatan Chattopadhyay Dr Kelvin Kwa Goutan Dalapati Rouzet Agaiby et al. | Analytical model for threshold voltage of p-MOSFET in strained-Si/SiGe dual channel architecture | 2006 |
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Dr Suresh Uppal Dr Mehdi Kanoun Dr Sanatan Chattopadhyay Rouzet Agaiby Dr Sarah Olsen et al. | Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices | 2006 |
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Goutan Dalapati Dr Kelvin Kwa Dr Sarah Olsen Dr Sanatan Chattopadhyay Professor Anthony O'Neill et al. | Impact of strained Si thickness and Ge our diffusion on strained-Si/SiO2 interface quality for surface channel strained Si n-MOSFET devices | 2006 |
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Dr Sarah Olsen Dr Piotr Dobrosz Dr Enrique Escobedo-Cousin Rouzet Agaiby Rimoon Agaiby et al. | Strain characterisation in advanced Si devices | 2006 |
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Professor Anthony O'Neill Dr Sarah Olsen Dr Enrique Escobedo-Cousin John Varzgar Rouzet Agaiby et al. | Strained silicon technology | 2006 |
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Dr Sarah Olsen Professor Steve Bull Dr Piotr Dobrosz Dr Enrique Escobedo-Cousin Rouzet Agaiby et al. | Thermal stability of thin virtual substrates for high performance devices | 2006 |
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