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Transfer of Physically-Based Models from Process to Device Simulations: Application to Advanced Strained Si/SiGe MOSFETs

Lookup NU author(s): Professor Nick Cowern, Dr Nick Bennett, Dr Chihak Ahn, Dr Joo Chul Yoon

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Abstract

Integrated process and device simulations were used to predict sub-45nm Strained-Si/Si_0.8Ge_0.2 device performance. Physically-based process models, generalized from Si to strained-Si and SiGe, describe dopant implantation and diffusion, including amorphization, defect interactions and evolution, as well as dopant-defect interactions. The models are used within a unique simulation tool to reproduce the electrical characteristics of Si/SiGe devices.

Publication metadata

Author(s): Bazizi EM, Fazzini PF, Cristiano F, Pakfar A, Tavernier C, Payet F, Skotnicki T, Zechner C, Zographos N, Matveev D, Cowern NEB, Bennett N, Ahn C, Yoon JC

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: International Electron Device Meeting

Year of Conference: 2010

Pages: 15.1.1-15.1.4

ISSN: 0163-1918

Publisher: IEEE

URL: http://dx.doi.org/10.1109/IEDM.2010.5703365

DOI: 10.1109/IEDM.2010.5703365

Notes: Online ISBN: 9781424474196

Library holdings: Search Newcastle University Library for this item

ISBN: 9781442474185

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