Toggle Main Menu Toggle Search

Open Access padlockePrints

Transfer of Physically-Based Models from Process to Device Simulations: Application to Advanced Strained Si/SiGe MOSFETs

Lookup NU author(s): Professor Nick Cowern, Dr Nick Bennett, Dr Chihak Ahn, Dr Joo Chul Yoon


Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Integrated process and device simulations were used to predict sub-45nm Strained-Si/Si0.8Ge0.2 device performance. Physically-based process models, generalized from Si to strained-Si and SiGe, describe dopant implantation and diffusion, including amorphization, defect interactions and evolution, as well as dopant-defect interactions. The models are used within a unique simulation tool to reproduce the electrical characteristics of Si/SiGe devices.

Publication metadata

Author(s): Bazizi EM, Fazzini PF, Cristiano F, Pakfar A, Tavernier C, Payet F, Skotnicki T, Zechner C, Zographos N, Matveev D, Cowern NEB, Bennett N, Ahn C, Yoon JC

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: International Electron Device Meeting

Year of Conference: 2010

Pages: 15.1.1-15.1.4

ISSN: 0163-1918

Publisher: IEEE


DOI: 10.1109/IEDM.2010.5703365

Notes: Online ISBN: 9781424474196

Library holdings: Search Newcastle University Library for this item

ISBN: 9781442474185