Browse by author
Lookup NU author(s): Professor Nick Cowern,
Dr Nick Bennett,
Dr Chihak Ahn,
Dr Joo Chul Yoon
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
Integrated process and device simulations were used to predict sub-45nm Strained-Si/Si0.8Ge0.2 device performance. Physically-based process models, generalized from Si to strained-Si and SiGe, describe dopant implantation and diffusion, including amorphization, defect interactions and evolution, as well as dopant-defect interactions. The models are used within a unique simulation tool to reproduce the electrical characteristics of Si/SiGe devices.
Author(s): Bazizi EM, Fazzini PF, Cristiano F, Pakfar A, Tavernier C, Payet F, Skotnicki T, Zechner C, Zographos N, Matveev D, Cowern NEB, Bennett N, Ahn C, Yoon JC
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: International Electron Device Meeting
Year of Conference: 2010
Notes: Online ISBN: 9781424474196
Library holdings: Search Newcastle University Library for this item