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A design methodology for maximizing the voltage gain of strained Si MOSFETs using the thickness of the silicon-germanium strain relaxed buffer as a design parameter

Lookup NU author(s): Layi Alatise, Dr Kelvin Kwa, Dr Sarah Olsen, Professor Anthony O'Neill

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Publication metadata

Author(s): Alatise O, Kwa K, Olsen S, O'Neill A

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: International Semiconductor Device Research Symposium (ISDRS)

Year of Conference: 2009

Pages: -

URL: http://dx.doi.org/10.1109/ISDRS.2009.5378304

DOI: 10.1109/ISDRS.2009.5378304

Library holdings: Search Newcastle University Library for this item

ISBN: 9781424460304

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