Publications by Layi Alatise - ePrints

Browsing publications by Layi Alatise.

Newcastle Authors	Title	Year
Dr Haimeng Wu Dr Xiang Wang Layi Alatise Professor Volker Pickert	Investigation into the switching transient of SiC MOSFET using voltage/current source gate driver	2020
Dr Haimeng Wu Dr Xiang Wang Professor Volker Pickert Layi Alatise	Optimisation of the gate voltage in SiC MOSFETs: Efficiency vs reliability	2020
Layi Alatise Dr Sarah Olsen Professor Anthony O'Neill	Improved self-gain in deep submicrometer strained silicon-germanium pMOSFETs with HfSiOx/TiSiN gate stacks	2010
Layi Alatise Dr Sarah Olsen Professor Anthony O'Neill	Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics	2010
Layi Alatise Dr Kelvin Kwa Dr Sarah Olsen Professor Anthony O'Neill	The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs	2010
Layi Alatise Dr Kelvin Kwa Dr Sarah Olsen Professor Anthony O'Neill	A design methodology for maximizing the voltage gain of strained Si MOSFETs using the thickness of the silicon-germanium strain relaxed buffer as a design parameter	2009
Layi Alatise Dr Kelvin Kwa Dr Sarah Olsen Professor Anthony O'Neill	Improved Analog Performance in Strained-Si MOSFETs Using the Thickness of the Silicon-Germanium Strain-Relaxed Buffer as a Design Parameter	2009
Layi Alatise Dr Kelvin Kwa Dr Sarah Olsen Professor Anthony O'Neill	Improved Analog Performance of Strained Si n-MOSFETs on Thin SiGe Strained Relaxed Buffers	2008
Dr Sarah Olsen Dr Piotr Dobrosz Rouzet Agaiby Dr Yuk Tsang Layi Alatise et al.	Nanoscale strain characterisation for ultimate CMOS and beyond	2008
Dr Sarah Olsen Dr Piotr Dobrosz Rouzet Agaiby Dr Yuk Tsang Layi Alatise et al.	Nanoscale strain characterisation for ultimate CMOS and beyond	2008
Dr Enrique Escobedo-Cousin Dr Sarah Olsen Professor Anthony O'Neill Layi Alatise Rouzet Agaiby et al.	Strained Si/strained SiGe/relaxed SiGe structures: identifying roughness due to compressed SiGe and its impact on high mobility MOSFETs	2007