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Lookup NU author(s): Dr Piotr Dobrosz,
Dr Sarah Olsen,
Professor Anthony O'Neill
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We report for the first time the optimization of the channel lateral strain profile as a new technological booster for improved performance of multi-gate n-channel MOSFET. We find that quasi-uniform or flat-Gaussian-close-to-the-drain profiles are optimum for the Ion boosting of sub-50nm scaled MOSFETs, while the penalty on Ioff and subthreshold slope is minimum. The reported predictions use realistic lateral uniaxial strain profiles, with peaks up to few GPa's and average values of hundreds of MPa's. ©2009 IEEE.
Author(s): De Michielis L, Moselund K, Bouvet D, Dobrosz P, Olsen S, O'Neill A, Lattanzio L, Najmzadeh M, Selmi L, Ionescu A
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: International Symposium on VLSI Technology, Systems, and Applications, Proceedings
Year of Conference: 2009
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