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Browsing publications by Dr Piotr Dobrosz

Newcastle AuthorsTitleYearFull text
Dr Piotr Dobrosz
Dr Sarah Olsen
Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs2010
Dr Piotr Dobrosz
Dr Sarah Olsen
Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs2010
Dr Piotr Dobrosz
Dr Sarah Olsen
The High-Mobility Bended n-Channel Silicon Nanowire Transistor2010
Dr Piotr Dobrosz
Dr Sarah Olsen
Investigation of oxidation-induced strain in a top-down Si nanowire platform2009
Dr Piotr Dobrosz
Dr Sarah Olsen
Professor Anthony O'Neill
Optimization of the channel lateral strain profile for improved performance of multi-gate MOSFETs2009
Lisa Sanderson
Dr Piotr Dobrosz
Dr Sarah Olsen
Professor Steve Bull
Tip enhanced Raman spectroscopy for high resolution assessment of strained silicon devices2009
Dr Piotr Dobrosz
Dr Sarah Olsen
Professor Anthony O'Neill
Investigation of Strain Profile Optimization in gate-all-around suspended silicon nanowire FET2008
Rouzet Agaiby
Dr Sarah Olsen
Dr Piotr Dobrosz
Professor Steve Bull
Professor Anthony O'Neill
Nanometer Scale Strain Profiling Through Si-SiGe Heterolayers2008
Rouzet Agaiby
Dr Sarah Olsen
Dr Piotr Dobrosz
Professor Steve Bull
Professor Anthony O'Neill
Nanometer strain profiling through Si/SiGe quantum layers2008
Dr Sarah Olsen
Dr Piotr Dobrosz
Rouzet Agaiby
Dr Yuk Tsang
Layi Alatise
et al.		Nanoscale strain characterisation for ultimate CMOS and beyond2008
Dr Sarah Olsen
Dr Piotr Dobrosz
Rouzet Agaiby
Dr Yuk Tsang
Layi Alatise
et al.		Nanoscale strain characterisation for ultimate CMOS and beyond2008
Dr Piotr Dobrosz
Dr Sarah Olsen
Professor Steve Bull
Dr Yuk Tsang
Rouzet Agaiby
et al.		Nanoscale strain characterisation in patterned SSOI structures2008
Dr Sarah Olsen
John Varzgar
Dr Enrique Escobedo-Cousin
Rouzet Agaiby
Dr Piotr Dobrosz
et al.		Strain engineering for high mobility channels2008
Dr Piotr Dobrosz
Dr Sarah Olsen
Professor Anthony O'Neill
Bended gate-all-around nanowire MOSFET: A device with enhanced carrier mobility due to oxidation-induced tensile stress2007
Professor Anthony O'Neill
Dr Sarah Olsen
Dr Yuk Tsang
Dr Piotr Dobrosz
Evolution of strain engineering for Si technology2007
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