Dr Piotr Dobrosz Dr Sarah Olsen
| Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs | 2010 |
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Dr Piotr Dobrosz Dr Sarah Olsen
| Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs | 2010 |
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Dr Piotr Dobrosz Dr Sarah Olsen
| The High-Mobility Bended n-Channel Silicon Nanowire Transistor | 2010 |
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Dr Piotr Dobrosz Dr Sarah Olsen
| Investigation of oxidation-induced strain in a top-down Si nanowire platform | 2009 |
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Dr Piotr Dobrosz Dr Sarah Olsen Professor Anthony O'Neill
| Optimization of the channel lateral strain profile for improved performance of multi-gate MOSFETs | 2009 |
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Lisa Sanderson Dr Piotr Dobrosz Dr Sarah Olsen Professor Steve Bull
| Tip enhanced Raman spectroscopy for high resolution assessment of strained silicon devices | 2009 |
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Dr Piotr Dobrosz Dr Sarah Olsen Professor Anthony O'Neill
| Investigation of Strain Profile Optimization in gate-all-around suspended silicon nanowire FET | 2008 |
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Rouzet Agaiby Dr Sarah Olsen Dr Piotr Dobrosz Professor Steve Bull Professor Anthony O'Neill et al. | Nanometer Scale Strain Profiling Through Si-SiGe Heterolayers | 2008 |
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Rouzet Agaiby Dr Sarah Olsen Dr Piotr Dobrosz Professor Steve Bull Professor Anthony O'Neill et al. | Nanometer strain profiling through Si/SiGe quantum layers | 2008 |
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Dr Sarah Olsen Dr Piotr Dobrosz Rouzet Agaiby Dr Yuk Tsang Layi Alatise et al. | Nanoscale strain characterisation for ultimate CMOS and beyond | 2008 |
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Dr Sarah Olsen Dr Piotr Dobrosz Rouzet Agaiby Dr Yuk Tsang Layi Alatise et al. | Nanoscale strain characterisation for ultimate CMOS and beyond | 2008 |
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Dr Piotr Dobrosz Dr Sarah Olsen Professor Steve Bull Dr Yuk Tsang Rouzet Agaiby et al. | Nanoscale strain characterisation in patterned SSOI structures | 2008 |
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Dr Sarah Olsen John Varzgar Dr Enrique Escobedo-Cousin Rouzet Agaiby Dr Piotr Dobrosz et al. | Strain engineering for high mobility channels | 2008 |
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Dr Piotr Dobrosz Dr Sarah Olsen Professor Anthony O'Neill
| Bended gate-all-around nanowire MOSFET: A device with enhanced carrier mobility due to oxidation-induced tensile stress | 2007 |
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Professor Anthony O'Neill Dr Sarah Olsen Dr Yuk Tsang Dr Piotr Dobrosz
| Evolution of strain engineering for Si technology | 2007 |
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Dr Enrique Escobedo-Cousin Dr Sarah Olsen Professor Anthony O'Neill Layi Alatise Rouzet Agaiby et al. | Strained Si/strained SiGe/relaxed SiGe structures: identifying roughness due to compressed SiGe and its impact on high mobility MOSFETs | 2007 |
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Dr Enrique Escobedo-Cousin Dr Sarah Olsen Dr Piotr Dobrosz Professor Steve Bull Professor Anthony O'Neill et al. | Thermal stability of supercritical thickness-strained Si layers on thin strain-relaxed buffers | 2007 |
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Dr Sarah Olsen Dr Enrique Escobedo-Cousin John Varzgar Rimoon Agaiby Dr Johan Seger et al. | Control of self-heating in thin virtual substrate strained Si MOSFETs | 2006 |
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Professor Anthony O'Neill Dr Sarah Olsen Dr Yuk Tsang Dr Piotr Dobrosz
| Evolution of strain engineering for Si technology | 2006 |
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Goutan Dalapati Dr Sanatan Chattopadhyay Dr Kelvin Kwa Dr Sarah Olsen Dr Yuk Tsang et al. | Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs | 2006 |
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Dr Sarah Olsen Dr Piotr Dobrosz Dr Enrique Escobedo-Cousin Rouzet Agaiby Rimoon Agaiby et al. | Strain characterisation in advanced Si devices | 2006 |
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Professor Anthony O'Neill Dr Sarah Olsen Dr Enrique Escobedo-Cousin John Varzgar Rimoon Agaiby et al. | Strained Si MOSFETs using thin virtual substrates | 2006 |
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Professor Anthony O'Neill Dr Sarah Olsen Dr Enrique Escobedo-Cousin John Varzgar Rimoon Agaiby et al. | Strained Si technology | 2006 |
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Professor Anthony O'Neill Dr Sarah Olsen Dr Enrique Escobedo-Cousin John Varzgar Rouzet Agaiby et al. | Strained silicon technology | 2006 |
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Dr Sarah Olsen Dr Piotr Dobrosz Professor Steve Bull Professor Anthony O'Neill
| The relationship between strain generation and relaxation, composition and electrical performance in strained Si/SiGe MOS technology | 2006 |
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Dr Sarah Olsen Professor Steve Bull Dr Piotr Dobrosz Dr Enrique Escobedo-Cousin Rouzet Agaiby et al. | Thermal stability of thin virtual substrates for high performance devices | 2006 |
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Professor Steve Bull Dr Piotr Dobrosz Dr Sarah Olsen Professor Anthony O'Neill
| Assessment of strained silicon/SiGe with different architectures by Raman spectroscopy | 2005 |
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Dr Sarah Olsen Dr Piotr Dobrosz Dr Enrique Escobedo-Cousin Professor Steve Bull Professor Anthony O'Neill et al. | Mobility-limiting mechanisms in single and dual channel strained Si/SiGe MOSFETs | 2005 |
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Professor Steve Bull Dr Piotr Dobrosz Dr Sarah Olsen Professor Anthony O'Neill
| On the relationship between electrical performance and Raman spectroscopic results for strained Si/SiGe devices | 2005 |
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Dr Sarah Olsen Professor Anthony O'Neill Dr Piotr Dobrosz Professor Steve Bull Luke Driscoll et al. | Study of strain relaxation in Si/SiGe metal-oxide-semiconductor field-effect transistors | 2005 |
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Dr Piotr Dobrosz Professor Steve Bull Dr Sarah Olsen Professor Anthony O'Neill
| The use of Raman spectroscopy to identify strain and strain relaxation in strained Si/SiGe structures | 2005 |
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Lynn Driscoll Dr Sarah Olsen Dr Sanatan Chattopadhyay Professor Anthony O'Neill Dr Kelvin Kwa et al. | Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters | 2004 |
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Luke Driscoll Dr Sarah Olsen Dr Sanatan Chattopadhyay Professor Anthony O'Neill Dr Kelvin Kwa et al. | Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters | 2004 |
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Luke Driscoll Dr Sarah Olsen Dr Sanatan Chattopadhyay Professor Anthony O'Neill Dr Kelvin Kwa et al. | Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters | 2004 |
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Dr Piotr Dobrosz Professor Steve Bull Dr Sarah Olsen Professor Anthony O'Neill
| Measurement of the residual macro and microstrain in strained Si/SiGe using Raman spectroscopy | 2004 |
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Dr Piotr Dobrosz Professor Steve Bull Dr Sarah Olsen Professor Anthony O'Neill
| Measurement of the residual macro and microstrain in strained Si/SiGe using Raman spectroscopy | 2004 |
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Dr Piotr Dobrosz Professor Steve Bull Dr Sarah Olsen Professor Anthony O'Neill
| Measurement of the residual macro and microstrain in strained Si/SiGe using Raman spectroscopy | 2004 |
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Dr Piotr Dobrosz Professor Steve Bull Dr Sarah Olsen Professor Anthony O'Neill
| Measurement of the Residual Macro and Microstrain in Strained Si/SiGe using Raman Spectroscopy Z Metal | 2004 |
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Dr Piotr Dobrosz Professor Steve Bull Dr Sarah Olsen Professor Anthony O'Neill
| Measurement of the residual strain in strained Si/SiGe using Raman spectroscopy | 2004 |
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Dr Piotr Dobrosz Professor Steve Bull Dr Sarah Olsen Professor Anthony O'Neill
| Technique for measuring the residual strain in strained Si/SiGe MOSFET structures using Raman spectroscopy | 2004 |
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Dr Piotr Dobrosz Professor Steve Bull Dr Sarah Olsen Professor Anthony O'Neill
| Technique for measuring the residual strain in strained Si/SiGe MOSFET structures using Raman spectroscopy | 2004 |
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