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Increased Mobility in Enhancement Mode 4H-SiC MOSFET Using a Thin SiO2 / Al2O3 Gate Stack

Lookup NU author(s): Faiz Arith, Dr Jesus Urresti IbanezORCiD, Dr Konstantin VasilevskiyORCiD, Dr Sarah Olsen, Professor Nick Wright, Professor Anthony O'Neill



This is the authors' accepted manuscript of an article that has been published in its final definitive form by IEEE, 2018.

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A field effect mobility of 125 cm2/V·s and a subthreshold slope of 130 mV/dec were obtained in enhancement mode 4H-SiC MOSFETs with a channel length of 2 µm. The fabricated devices utilised a gate stack comprising a 0.7 nm thin thermal SiO2, thereby reducing defects following oxidation, and a 40 nm thick Al2O3 formed by atomic layer deposition. A high mobility was maintained over a wide gate voltage range and resulted in increases of up to 120x in drain current for the same gate overdrive voltage compared to MOSFETs having a thicker thermal SiO2 gate stack with the same effective oxide thickness fabricated alongside.Nitridation is not included in either MOSFET process.

Publication metadata

Author(s): Arith F, Urresti J, Vasilevskiy K, Olsen S, Wright N, O'Neill A

Publication type: Article

Publication status: Published

Journal: IEEE Electron Device Letters

Year: 2018

Volume: 39

Issue: 4

Pages: 564-567

Print publication date: 01/04/2018

Online publication date: 19/02/2018

Acceptance date: 13/02/2018

Date deposited: 15/02/2018

ISSN (print): 0741-3106

ISSN (electronic): 1558-0563

Publisher: IEEE


DOI: 10.1109/LED.2018.2807620


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