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Lookup NU author(s): Faiz Arith,
Dr Jesus Urresti Ibanez,
Dr Konstantin Vasilevskiy,
Dr Sarah Olsen,
Professor Nick Wright,
Professor Anthony O'Neill
This is the authors' accepted manuscript of an article that has been published in its final definitive form by IEEE, 2018.
For re-use rights please refer to the publisher's terms and conditions.
A field effect mobility of 125 cm2/V·s and a subthreshold slope of 130 mV/dec were obtained in enhancement mode 4H-SiC MOSFETs with a channel length of 2 µm. The fabricated devices utilised a gate stack comprising a 0.7 nm thin thermal SiO2, thereby reducing defects following oxidation, and a 40 nm thick Al2O3 formed by atomic layer deposition. A high mobility was maintained over a wide gate voltage range and resulted in increases of up to 120x in drain current for the same gate overdrive voltage compared to MOSFETs having a thicker thermal SiO2 gate stack with the same effective oxide thickness fabricated alongside.Nitridation is not included in either MOSFET process.
Author(s): Arith F, Urresti J, Vasilevskiy K, Olsen S, Wright N, O'Neill A
Publication type: Article
Publication status: Published
Journal: IEEE Electron Device Letters
Print publication date: 01/04/2018
Online publication date: 19/02/2018
Acceptance date: 13/02/2018
Date deposited: 15/02/2018
ISSN (print): 0741-3106
ISSN (electronic): 1558-0563
Data Source Location: http://dx.doi.org/10.17634/120975-1
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