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Lookup NU author(s): Professor Anthony O'Neill, Faiz Arith, Dr Jesus Urresti IbanezORCiD, Dr Konstantin VasilevskiyORCiD, Professor Nick Wright, Dr Sarah Olsen
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© 2018 IEEE. Enhancement mode 4H-SiC MOSFETs with a channel length of 2 μm achieved a room temperature field effect mobility of 125 cm2/V•s and a subthreshold slope of 130 mV/dec. The temperature dependence of mobility up to 300 °C indicates that phonon scattering has replaced Coulombic scattering in these devices, which remain enhancement mode with high mobility and an ON/OFF current ratio in excess of 106. The fabricated devices utilised a gate stack comprising a 0.7 nm thin thermal SiO2, thereby reducing defects following oxidation, and a 40 nm thick Al2O3 formed by atomic layer deposition.
Author(s): Orneill A, Arith F, Urresti J, Vasilevskiy K, Wright N, Olsen S
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
Year of Conference: 2018
Pages: 1-4
Online publication date: 06/12/2018
Acceptance date: 02/04/2018
Publisher: IEEE
URL: https://doi.org/10.1109/ICSICT.2018.8564911
DOI: 10.1109/ICSICT.2018.8564911
Library holdings: Search Newcastle University Library for this item
ISBN: 9781538644409
