Toggle Main Menu Toggle Search

Open Access padlockePrints

High Mobility 4H-SiC MOSFET

Lookup NU author(s): Professor Anthony O'Neill, Faiz Arith, Dr Jesus Urresti IbanezORCiD, Dr Konstantin VasilevskiyORCiD, Professor Nick Wright, Dr Sarah Olsen


Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


© 2018 IEEE. Enhancement mode 4H-SiC MOSFETs with a channel length of 2 μm achieved a room temperature field effect mobility of 125 cm2/V•s and a subthreshold slope of 130 mV/dec. The temperature dependence of mobility up to 300 °C indicates that phonon scattering has replaced Coulombic scattering in these devices, which remain enhancement mode with high mobility and an ON/OFF current ratio in excess of 106. The fabricated devices utilised a gate stack comprising a 0.7 nm thin thermal SiO2, thereby reducing defects following oxidation, and a 40 nm thick Al2O3 formed by atomic layer deposition.

Publication metadata

Author(s): Orneill A, Arith F, Urresti J, Vasilevskiy K, Wright N, Olsen S

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Year of Conference: 2018

Pages: 1-4

Online publication date: 06/12/2018

Acceptance date: 02/04/2018

Publisher: IEEE


DOI: 10.1109/ICSICT.2018.8564911

Library holdings: Search Newcastle University Library for this item

ISBN: 9781538644409