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Lookup NU author(s): Merve Yakut, Atreyee Roy, Jake Sheriff, Dr Sarah Olsen, Dr Konstantin VasilevskiyORCiD, Professor Anthony O'Neill
This work is licensed under a Creative Commons Attribution 4.0 International License (CC BY 4.0).
© 2024 The Author(s). Published by Trans Tech Publications Ltd, Switzerland.We present the improvement of SiO2/4H-SiC interface quality and high field-effect (FE) mobility (μFE) in 4H-SiC MOSFETs. This is achieved by introducing a nitrous oxide (N2O) plasma in-situ pre-treatment before gate stack formation using plasma enhanced chemical vapour deposition (PECVD) oxide followed by a post deposition anneal (PDA) in diluted N2O for times ranging from 30 to 120 minutes thereby creating an ultra-thin thermally grown SiO2 layer at the SiO2/4H-SiC interface. MOS capacitors with SiO2 deposited on in-situ pre-treated SiC surfaces had a lower density of interface traps (DIT) for all PDA durations, compared with devices having untreated PECVD oxides or control devices with 30 nm thermally grown oxide. After PDA for 90 minutes, a minimum DIT value of 1.2×1011 cm-2·eV-1 was measured. A peak μFE value reaching 94 cm2/(V·s) was measured in n-channel planar MOSFETs fabricated with PECVD oxide on in-situ pre-treated devices, which significantly exceeds a maximum μFE of 6 cm2/(V·s) in control devices.
Author(s): Yakut M, Roy A, Arith F, Whitworth A, Alexander A, Gryglewicz J, Sheriff J, Olsen S, Vasilevskiy K, O'Neill A
Editor(s): Riccio M; Irace A; Breglio G
Publication type: Book Chapter
Publication status: Published
Book Title: Formation of Solid-State Structures
Year: 2024
Volume: 359
Pages: 157-162
Print publication date: 28/08/2024
Online publication date: 22/08/2024
Acceptance date: 02/05/2024
Series Title: Solid State Phenomena
Publisher: Trans Tech Publications Ltd
Place Published: Baech, Switzerland
URL: https://doi.org/10.4028/p-vY4b9t
DOI: 10.4028/p-vY4b9t
Notes: 9783036416328 ebook ISBN.
Library holdings: Search Newcastle University Library for this item
ISBN: 9783036406329
