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Implanted bipolar technology in 4H-SiC

Lookup NU author(s): Professor Nick Wright, Dr Christopher Johnson, Professor Anthony O'Neill, Dr Alton Horsfall, Dr Sylvie Ortolland, Kazuhiro Adachi

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Abstract

A simple ion-implanted bipolar transistor technology in 4H-SiC is presented. Suitable for both high-voltage vertical devices and lateral high-temperature transistors (for circuit applications), the technology is based on an implanted boron p-well with nitrogen and boron (or aluminium) implanted n+ and p+ regions respectively. The effects of base doping and carrier lifetime on device performance have been studied using TCAD techniques. It is shown that understanding the strong variation of carrier concentration with temperature (due to deep activation levels) and applied field (so-called field ionization) is critical in device design optimisation. The effects of post-implant anneal conditions on the physical and electrical characteristics of the junctions are investigated. It is shown that annealing can remove much of the damage induced by high dose nitrogen implantation but that residual damage is still present. The electrical characteristics of simple BJT transistors with breakdown voltages in excess of 1000V and common-emitter gains of ∼2 is related to the level of such residual damage.


Publication metadata

Author(s): Wright NG, Johnson CM, O'Neill AG, Horsfall A, Ortolland S, Adachi K, Knights AP, Coleman PG

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 2000 MRS Spring Meeting Proceedings: Wide-Bandgap Electronic Devices. Symposium

Year of Conference: 2000

Pages: T171-T176

Publisher: Materials Research Society

URL: http://dx.doi.org/10.1557/PROC-622-T1.7.1

DOI: 10.1557/PROC-622-T1.7.1

Notes: Published online - by Cambridge University Press

Library holdings: Search Newcastle University Library for this item

ISBN: 19464274


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