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Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology

Lookup NU author(s): Professor Nick Wright, Dr Christopher Johnson, Professor Anthony O'Neill, Dr Alton Horsfall, Dr Sylvie Ortolland, Kazuhiro Adachi, Dr Gordon Phelps

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Abstract

The effects of post-implant anneal conditions on the level of residual damage resulting from nitrogen and boron implants after different anneal processes are investigated using the Positron Annihilation Spectroscopy (PAS) technique. It is shown that after implantation there is a substantial defect concentration significantly below the range of the implants. However such damage is almost completely recovered after anneal in contrast with the damage close to the implant range point. Such residual damage has a strong effect on the electrical characteristics of double implanted bipolar transistors - principally though reduction in carrier mobility and lifetime. It is shown that the precise implant and anneal conditions play a strong role in the level of such damage and the subsequent electrical performance of bipolar devices.


Publication metadata

Author(s): Wright NG; Ortolland S; Phelps GJ; O'Neill AG; Horsfall A; Adachi K; Johnson CM; Burrows CP; Knights AP; Coleman PG

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Materials Research Society Symposium - Proceedings 2000

Year of Conference: 2000

Pages: H5.30.1-H5.30.5

Publisher: Cambridge University Press

URL: http://dx.doi.org/10.1557/PROC-640-H5.30

DOI: 10.1557/PROC-640-H5.30

Library holdings: Search Newcastle University Library for this item

ISBN: 02729172


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