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Hinge sensitivity in a micro-rotating structure for predicting induced thermo mechanical stress in integrated circuit metal interconnects

Lookup NU author(s): Sorin Soare, Professor Steve BullORCiD, Dr Alton Horsfall, Professor Nick Wright, Professor Anthony O'Neill

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Abstract

The process-induced stress in interconnects within integrated circuits (IC) has a direct influence on the mean time to failure of the devices. Since measurement of stress in individual metallised lines is not possible by existing techniques, another approach has been adopted where a test structure is generated during fabrication based on a micro-rotating cantilever sensor. To support the design, finite element modeling (FEM) has been performed. By comparing the rotation predicted by FEM simulations and that observed experimentally, a clear discrepancy is observed which is critically dependent on the details of the sensor design, the pattern transfer of the lithographic process and on the dry etching processing.

Publication metadata

Author(s): Dos Santos JMM, Wang K, Soare SM, Bull SJ, Horsfall AB, Wright NG, O'Neill AG, Terry JG, Walton AJ, Gundlach AM, Stevenson JTM

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Symposium on Thin Films - Stresses and Mechanical Properties X held at the 2003 MRS Fall Meeting

Year of Conference: 2003

Pages: 467-472

ISSN: 0272-9172

Publisher: Materials Research Society

Library holdings: Search Newcastle University Library for this item

ISBN: 1558997334

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