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Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing

Lookup NU author(s): Dr Konstantin Vasilevskiy, Professor Nick Wright, Irina Nikitina, Dr Alton Horsfall, Professor Anthony O'Neill, Dr Christopher Johnson

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Abstract

A graphite capping layer has been evaluated to protect the surface of patterned and selectively implanted 4H-SiC epitaxial wafers during post-implantation annealing. AZ-5214E photoresist was spun and baked in vacuum at temperatures ranging from 750 to 850 °C to form a continuous coating on both planar and mesa-etched SiC surfaces with features up to 2 μm in height. Complete conversion of the hydrogenated polymer-like film into nanocrystalline graphite layer was verified by Raman spectroscopy. The graphite capping layer remained undamaged and protected both planar and mesa-etched SiC surfaces during subsequent annealing in argon ambient at temperatures up to 1650 °C for 30 min. It effectively suppressed step bunching and dopant out-diffusion in implanted regions and simultaneously ensured that the un-implanted surface of the 4H-SiC epitaxial wafer remained free of contamination. Schottky barrier diodes formed on the un-implanted annealed surfaces displayed almost ideal characteristics.© 2005 TOP Publishing Ltd.


Publication metadata

Author(s): Vassilevski KV, Wright NG, Nikitina IP, Horsfall AB, O'Neill AG, Uren MJ, Hilton KP, Masterton AG, Hydes AJ, Johnson CM

Publication type: Article

Publication status: Published

Journal: Semiconductor Science and Technology

Year: 2005

Volume: 20

Issue: 3

Pages: 271-278

ISSN (print): 0268-1242

ISSN (electronic): 1361-6641

Publisher: Institute of Physics Publishing Ltd.

URL: http://dx.doi.org/10.1088/0268-1242/20/3/003

DOI: 10.1088/0268-1242/20/3/003


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