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Lookup NU author(s): Dr Konstantin VasilevskiyORCiD,
Professor Nick Wright,
Dr Alton Horsfall,
Professor Anthony O'Neill,
Dr Christopher Johnson
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A graphite capping layer has been evaluated to protect the surface of patterned and selectively implanted 4H-SiC epitaxial wafers during post-implantation annealing. AZ-5214E photoresist was spun and baked in vacuum at temperatures ranging from 750 to 850 °C to form a continuous coating on both planar and mesa-etched SiC surfaces with features up to 2 μm in height. Complete conversion of the hydrogenated polymer-like film into nanocrystalline graphite layer was verified by Raman spectroscopy. The graphite capping layer remained undamaged and protected both planar and mesa-etched SiC surfaces during subsequent annealing in argon ambient at temperatures up to 1650 °C for 30 min. It effectively suppressed step bunching and dopant out-diffusion in implanted regions and simultaneously ensured that the un-implanted surface of the 4H-SiC epitaxial wafer remained free of contamination. Schottky barrier diodes formed on the un-implanted annealed surfaces displayed almost ideal characteristics.© 2005 TOP Publishing Ltd.
Author(s): Vassilevski KV, Wright NG, Nikitina IP, Horsfall AB, O'Neill AG, Uren MJ, Hilton KP, Masterton AG, Hydes AJ, Johnson CM
Publication type: Article
Publication status: Published
Journal: Semiconductor Science and Technology
ISSN (print): 0268-1242
ISSN (electronic): 1361-6641
Publisher: Institute of Physics Publishing Ltd.
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