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Lookup NU author(s): Dr Konstantin VasilevskiyORCiD,
Professor Nick Wright,
Dr Alton Horsfall,
Professor Anthony O'Neill,
Dr Christopher Johnson
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High temperature silicon carbide diodes with nickel silicide Schottky contacts were fabricated by deposition of titanium-nickel metal film on 4H-SiC epitaxial wafer followed by annealing at 550 °C in vacuum. Room temperature boron implantation have been used to form single zone junction termination extension. 4H-SiC epitaxial structures designed to have theoretical parallel-plain breakdown voltages of 1900 and 3600 V have been used for this research. The diodes revealed soft recoverable avalanche breakdown at voltages of 1450 and 3400 V, respectively, which are about 80% and 95% of theoretical values. I-V characteristics of fabricated 4H-SiC Schottky diodes have been measured at temperatures from room temperature up to 400 °C. The diodes revealed unchangeable barrier heights and ideality factors as well as positive coefficients of breakdown voltage. © 2005 Elsevier B.V. All rights reserved.
Author(s): Vassilevski KV, Nikitina IP, Wright NG, Horsfall AB, O'Neill AG, Johnson CM
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials
Year of Conference: 2006
Publisher: Microelectronic Engineering, Elsevier BV
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