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Device processing and characterisation of high temperature silicon carbide Schottky diodes

Lookup NU author(s): Dr Konstantin Vasilevskiy, Irina Nikitina, Professor Nick Wright, Dr Alton Horsfall, Professor Anthony O'Neill, Dr Christopher Johnson

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Abstract

High temperature silicon carbide diodes with nickel silicide Schottky contacts were fabricated by deposition of titanium-nickel metal film on 4H-SiC epitaxial wafer followed by annealing at 550 °C in vacuum. Room temperature boron implantation have been used to form single zone junction termination extension. 4H-SiC epitaxial structures designed to have theoretical parallel-plain breakdown voltages of 1900 and 3600 V have been used for this research. The diodes revealed soft recoverable avalanche breakdown at voltages of 1450 and 3400 V, respectively, which are about 80% and 95% of theoretical values. I-V characteristics of fabricated 4H-SiC Schottky diodes have been measured at temperatures from room temperature up to 400 °C. The diodes revealed unchangeable barrier heights and ideality factors as well as positive coefficients of breakdown voltage. © 2005 Elsevier B.V. All rights reserved.


Publication metadata

Author(s): Vassilevski KV, Nikitina IP, Wright NG, Horsfall AB, O'Neill AG, Johnson CM

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials

Year of Conference: 2006

Pages: 150-154

ISSN: 0167-9317

Publisher: Microelectronic Engineering, Elsevier BV

URL: http://dx.doi.org/10.1016/j.mee.2005.10.041

DOI: 10.1016/j.mee.2005.10.041

Library holdings: Search Newcastle University Library for this item

ISBN: 18735568


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