Browse by author
Lookup NU author(s): Irina Nikitina,
Dr Konstantin VasilevskiyORCiD,
Dr Alton Horsfall,
Professor Nick Wright,
Professor Anthony O'Neill,
Dr Christopher Johnson
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
The composition and microstructure of compound contacts to 4H-SiC containing both titanium and nickel were investigated. Samples were prepared by metal evaporation on commercial 4H-SiC wafers followed by rapid thermal annealing (RTA). Contact structures with three different metal deposition sequences were investigated: (A) SiC/Ti(4 nm)/Ni(150 nm); (B) SiC/Ti(100 nm)/Ni(50 nm) and (C) SiC/Ti(4 nm)/Ni(50 nm)/Ti(100 nm). RTA was performed in a vacuum at 800, 925 and 1040 °C for a period of 800 s. X-ray diffraction, Auger electron spectroscopy and transmission electron microscopy were used for the characterization. A distinct spatial separation of nickel silicide and titanium carbide layers was observed in all samples. It was discovered that the final distribution of solid-state reaction products in B- and C-samples was independent of the order of the deposition of the initial metal films. In both samples, a two-phase TiC+C layer was found to be adjacent to the SiC substrate. Factors controlling phase formation and segregation are discussed. A two-stage reaction model is proposed to explain the reaction zone structure formed in the Ni-Ti-SiC system after high-temperature treatment. © 2006 IOP Publishing Ltd.
Author(s): Nikitina IP, Vassilevski KV, Horsfall AB, Wright NG, O'Neill AG, Johnson CM, Yamamoto T, Malhan RK
Publication type: Article
Publication status: Published
Journal: Semiconductor Science and Technology
ISSN (print): 0268-1242
ISSN (electronic): 1361-6641
Publisher: Institute of Physics Publishing Ltd.
Altmetrics provided by Altmetric