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Structural pattern formation in titanium-nickel contacts on silicon carbide following high-temperature annealing

Lookup NU author(s): Irina Nikitina, Dr Konstantin Vasilevskiy, Dr Alton Horsfall, Professor Nick Wright, Professor Anthony O'Neill, Dr Christopher Johnson

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Abstract

The composition and microstructure of compound contacts to 4H-SiC containing both titanium and nickel were investigated. Samples were prepared by metal evaporation on commercial 4H-SiC wafers followed by rapid thermal annealing (RTA). Contact structures with three different metal deposition sequences were investigated: (A) SiC/Ti(4 nm)/Ni(150 nm); (B) SiC/Ti(100 nm)/Ni(50 nm) and (C) SiC/Ti(4 nm)/Ni(50 nm)/Ti(100 nm). RTA was performed in a vacuum at 800, 925 and 1040 °C for a period of 800 s. X-ray diffraction, Auger electron spectroscopy and transmission electron microscopy were used for the characterization. A distinct spatial separation of nickel silicide and titanium carbide layers was observed in all samples. It was discovered that the final distribution of solid-state reaction products in B- and C-samples was independent of the order of the deposition of the initial metal films. In both samples, a two-phase TiC+C layer was found to be adjacent to the SiC substrate. Factors controlling phase formation and segregation are discussed. A two-stage reaction model is proposed to explain the reaction zone structure formed in the Ni-Ti-SiC system after high-temperature treatment. © 2006 IOP Publishing Ltd.


Publication metadata

Author(s): Nikitina IP, Vassilevski KV, Horsfall AB, Wright NG, O'Neill AG, Johnson CM, Yamamoto T, Malhan RK

Publication type: Article

Publication status: Published

Journal: Semiconductor Science and Technology

Year: 2006

Volume: 21

Issue: 7

Pages: 898-905

ISSN (print): 0268-1242

ISSN (electronic): 1361-6641

Publisher: Institute of Physics Publishing Ltd.

URL: http://dx.doi.org/10.1088/0268-1242/21/7/013

DOI: 10.1088/0268-1242/21/7/013


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