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Lookup NU author(s): Dr Konstantin Vasilevskiy,
Dr Alton Horsfall,
Professor Nick Wright,
Professor Anthony O'Neill,
Dr Christopher Johnson
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4H-SiC diodes with nickel suicide (Ni2Si) and molybdenum (Mo) Schottky contacts have been fabricated and characterised at temperature up to 400°C. Room temperature boron implantation has been used to form a single zone junction termination extension. Both Ni2Si and Mo diodes revealed unchanging ideality factors and barrier heights (1.45 and 1.3 eV, respectively) at temperatures up to 400°C Soft recoverable breakdowns were observed both in Ni2Si and Mo Schottky diodes at voltages above 1450 V and 3400 V depending on the epitaxial structure used. These values are about 76% and 94% of the ideal avalanche breakdown voltages. The Ni2Si diodes revealed positive temperature coefficients of breakdown voltage at temperature up to 240°C.
Author(s): Vassilevski K, Nikitina I, Bhatnagar P, Horsfall A, Wright N, O'Neill AG, Uren M, Hilton K, Munday A, Hydes A, Johnson CM
Editor(s): Devaty, RP; Larkin, DJ; Saddow, SE
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Materials Science Forum
Year of Conference: 2006
ISSN: 0255-5476 (print) 1422-6375 (online)
Publisher: Trans Tech Publications Ltd.
Notes: Silicon Carbide and Related Materials 2005
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