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Leakage current and charge trapping behavior in Ti O2 Si O2 high- κ gate dielectric stack on 4H-SiC substrate

Lookup NU author(s): Dr Rajat Mahapatra, Nipapan Poolamai, Dr Alton Horsfall, Dr Sanatan Chattopadhyay, Professor Nick Wright

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Abstract

The Ti O2 Si O2 gate dielectric stack on 4H-SiC substrate has been studied as a high- κ gate dielectric for metal-oxide semiconductor devices. X-ray photoelectron spectroscopy confirmed the formation of stoichiometric Ti O2 films. The leakage current through the stack layer was investigated and it has been shown to be a double conduction mechanism. At low fields, the current is governed by properties of the interfacial layer with a hopping like conduction mechanism, while at relatively high electric field, carriers are modulated by a trap assisted tunneling mechanism through traps located below the conduction band of Ti O2. The current-voltage characteristics, time evolution of charge transport, and capacitance-voltage behaviors under constant voltage stressing suggest the composite effect of electron trapping and positive charge generation in the dielectric stack layer. © 2007 American Vacuum Society.

Publication metadata

Author(s): Mahapatra R, Chakraborty AK, Poolamai N, Horsfall A, Chattopadhyay S, Wright NG, Coleman KS, Coleman PG, Burrows CP

Publication type: Article

Publication status: Published

Journal: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Year: 2007

Volume: 25

Issue: 1

Pages: 217-223

ISSN (print): 1071-1023

ISSN (electronic): 1520-8567

Publisher: American Institute of Physics

URL: http://dx.org/10.1116/1.2433976

DOI: 10.1116/1.2433976

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