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Lookup NU author(s): Dr Rajat Mahapatra,
Dr Alton Horsfall,
Dr Sanatan Chattopadhyay,
Professor Nick Wright
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The Ti O2 Si O2 gate dielectric stack on 4H-SiC substrate has been studied as a high- κ gate dielectric for metal-oxide semiconductor devices. X-ray photoelectron spectroscopy confirmed the formation of stoichiometric Ti O2 films. The leakage current through the stack layer was investigated and it has been shown to be a double conduction mechanism. At low fields, the current is governed by properties of the interfacial layer with a hopping like conduction mechanism, while at relatively high electric field, carriers are modulated by a trap assisted tunneling mechanism through traps located below the conduction band of Ti O2. The current-voltage characteristics, time evolution of charge transport, and capacitance-voltage behaviors under constant voltage stressing suggest the composite effect of electron trapping and positive charge generation in the dielectric stack layer. © 2007 American Vacuum Society.
Author(s): Mahapatra R, Chakraborty AK, Poolamai N, Horsfall A, Chattopadhyay S, Wright NG, Coleman KS, Coleman PG, Burrows CP
Publication type: Article
Publication status: Published
Journal: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
ISSN (print): 1071-1023
ISSN (electronic): 1520-8567
Publisher: American Institute of Physics
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