Enhanced dopant diffusion effects in 4H silicon carbide

Phelps, GJ; Wright, NG; Chester, EG; Johnson, CM; O'Neill, AG; Ortolland, S; Horsfall, AB; Vassilevski, K; Gwilliam, RM

doi:10.4028/www.scientific.net/MSF.389-393.855

Enhanced dopant diffusion effects in 4H silicon carbide

Lookup NU author(s): Dr Gordon Phelps, Professor Nick Wright, Dr Graeme Chester, Dr Christopher Johnson, Professor Anthony O'Neill, Dr Sylvie Ortolland, Dr Alton Horsfall, Dr Konstantin Vasilevskiy ORCiD

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Abstract

A physical model is proposed for the observed Transient Enhanced dopant Diffusion (TED) effects found in 4H-SiC during high temperature annealing. The proposed model is based on the effects of dopant diffusion combined with the action of the in built p-n junction electric field gradients found within the doped substrate resulting from the presence of the substrate dopants. The results obtained by the proposed model are based upon measured initial implanted dopant concentration profiles prior to high temperature annealing. Approximate solutions of the proposed model for the new physical dopant concentration profile within the substrate after high temperature annealing are presented. The resultant Field Enhanced Diffusion (FED) profile predictions of the proposed model are shown to be in excellent agreement with experimental findings.