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Lookup NU author(s): Dr Gordon Phelps,
Professor Nick Wright,
Dr Graeme Chester,
Dr Christopher Johnson,
Professor Anthony O'Neill,
Dr Sylvie Ortolland,
Dr Alton Horsfall,
Dr Konstantin Vasilevskiy
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A physical model is proposed for the observed Transient Enhanced dopant Diffusion (TED) effects found in 4H-SiC during high temperature annealing. The proposed model is based on the effects of dopant diffusion combined with the action of the in built p-n junction electric field gradients found within the doped substrate resulting from the presence of the substrate dopants. The results obtained by the proposed model are based upon measured initial implanted dopant concentration profiles prior to high temperature annealing. Approximate solutions of the proposed model for the new physical dopant concentration profile within the substrate after high temperature annealing are presented. The resultant Field Enhanced Diffusion (FED) profile predictions of the proposed model are shown to be in excellent agreement with experimental findings.
Author(s): Phelps GJ, Wright NG, Chester EG, Johnson CM, O'Neill AG, Ortolland S, Horsfall AB, Vassilevski K, Gwilliam RM
Editor(s): Yoshida, S., Nishino, S., Harima, H., Kimoto, T.
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: International Conference on Silicon Carbide and Related Materials
Year of Conference: 2002
Publisher: Trans Tech Publications Ltd.
Library holdings: Search Newcastle University Library for this item
Series Title: Materials Science Forum