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Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology

Lookup NU author(s): Professor Nick Wright, Dr Christopher Johnson, Professor Anthony O'Neill, Dr Alton Horsfall, Dr Sylvie Ortolland, Kazuhiro Adachi, Dr Gordon Phelps


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The effects of post-implant anneal conditions on the level of residual damage resulting from nitrogen and boron implants after different anneal processes are investigated using the positron annihilation spectroscopy (PAS) technique. It is shown that after implantation there is a substantial defect concentration significantly below the range of the implants. However such damage is almost completely recovered after anneal in contrast with the damage close to the implant range point. Such residual damage has a strong effect on the electrical characteristics of double implanted bipolar transistors principally though reduction in carrier mobility and lifetime. It is shown that the precise implant and anneal conditions play a strong role in the level of such damage and the subsequent electrical performance of bipolar devices. (6 References).

Publication metadata

Author(s): Wright NG; Ortolland S; Phelps GJ; ONeill AG; Horsfall A; Adachi K; Johnson CM; Knights AP; Coleman PG; Burrows CP

Editor(s): Agarwal, A

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Silicon Carbide - Materials, Processing and Devices. Symposium (Materials Research Society Symposium Proceedings

Year of Conference: 2001

Pages: H5

ISSN: 9781558995505

Publisher: Materials Research Society

Notes: Agarwal A Skowronski M Cooper JA Jr Janzen E 30.1-5. Warrendale, PA, USA. Silicon Carbide - Materials, Processing and Devices. Symposium. Boston, MA, USA. 27-29 Nov. 2000.