Toggle Main Menu Toggle Search

Open Access padlockePrints

A novel sensor for the direct measurement of process induced residual stress in interconnects

Lookup NU author(s): Dr Alton Horsfall, Sorin Soare, Professor Nick Wright, Professor Anthony O'Neill, Professor Steve BullORCiD

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Abstract

Residual stress in multilevel interconnects is a potential road block for the ITRS. Direct measurement of stress in interconnect tracks has been demonstrated for the first time using a rotating sensor fabricated in metallisation layers. The rotation is observable with a reflected light microscope and is compared with computer simulations using ANSYS. The structure is suitable for use in a production environment and is scalable to deep submicron features for future technology nodes. (8 References).


Publication metadata

Author(s): Horsfall AB, dos Santos JMM, Soare SM, Wright NG, O'Neill AG, Bull SJ, Walton AJ, Gundlach AM, Stevenson JTM

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 33rd European Solid-State Device Research

Year of Conference: 2003

Pages: 115-118

Publisher: IEEE

URL: http://dx.doi.org/10.1109/ESSDERC.2003.1256824

DOI: 10.1109/ESSDERC.2003.1256824

Notes: Franca J Freitas P Piscataway, NJ, USA. ESSDERC 2003. Proceedings of the 33rd European Solid-State Device Research - ESSDERC '03. Estoril, Portugal. IEEE. EDS. Infineon Technol. ATMEL. Tower Semiconductor Ltd. 16-18 Sept. 2003.

Library holdings: Search Newcastle University Library for this item

ISBN: 0780379994


Share