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Lookup NU author(s): Dr Alton Horsfall,
Professor Nick Wright,
Professor Anthony O'Neill,
Professor Steve Bull
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Residual stress in multilevel interconnects is a potential road block for the ITRS. Direct measurement of stress in interconnect tracks has been demonstrated for the first time using a rotating sensor fabricated in metallisation layers. The rotation is observable with a reflected light microscope and is compared with computer simulations using ANSYS. The structure is suitable for use in a production environment and is scalable to deep submicron features for future technology nodes. (8 References).
Author(s): Horsfall AB, dos Santos JMM, Soare SM, Wright NG, O'Neill AG, Bull SJ, Walton AJ, Gundlach AM, Stevenson JTM
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 33rd European Solid-State Device Research
Year of Conference: 2003
Notes: Franca J
Piscataway, NJ, USA.
ESSDERC 2003. Proceedings of the 33rd European Solid-State Device Research - ESSDERC '03. Estoril, Portugal. IEEE. EDS. Infineon Technol. ATMEL. Tower Semiconductor Ltd. 16-18 Sept. 2003.
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