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Enhanced nitrogen diffusion in 4H-SiC

Lookup NU author(s): Dr Gordon Phelps, Professor Nick Wright, Dr Graeme Chester, Dr Christopher Johnson, Professor Anthony O'Neill, Dr Sylvie Ortolland, Dr Alton Horsfall, Dr Konstantin Vasilevskiy

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Abstract

Experimental evidence is given for boron (B) enhanced diffusion of nitrogen (N) in ion-implanted 4H silicon carbide (4H-SiC), when a nitrogen implant is co-doped within an existing boron p-type well. The co-implanted nitrogen is shown to diffuse continuously with time when samples are annealed at 1600 degreesC-with little movement of the boron p-well implant profile. An effective nitrogen in boron diffusivity at 1600 degreesC is determined to be at least 60 times larger than that of a mono-doped nitrogen implant. (C) 2002 American Institute of Physics.


Publication metadata

Author(s): Wright NG; Vassilevski K; Ortolland S; Phelps GJ; O'Neill AG; Horsfall A; Chester EG; Johnson CM; Gwilliam RM; Coleman PG; Burrows CP

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2002

Volume: 80

Issue: 2

Pages: 228-230

ISSN (print): 0003-6951

ISSN (electronic): 1077-3118

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.1432451

DOI: 10.1063/1.1432451


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