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On the relationship between electrical performance and Raman spectroscopic results for strained Si/SiGe devices

Lookup NU author(s): Professor Steve BullORCiD, Dr Piotr Dobrosz, Dr Sarah Olsen, Professor Anthony O'Neill

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Author(s): Bull SJ, Dobrosz P, Olsen SH, O'Neill AG

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: International Conference on Silicon Epitaxy and Heterostructures (ICSI4)

Year of Conference: 2005

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