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A model for capacitance reconstruction from measured lossy MOS capacitance-voltage characteristics

Lookup NU author(s): Dr Kelvin Kwa, Dr Sanatan Chattopadhyay, Dr Nebojsa Jankovic Professor, Dr Sarah Olsen, Luke Driscoll, Professor Anthony O'Neill

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Abstract

A capacitance model is developed and a correction formula is derived to reconstruct the intrinsic oxide capacitance value from measured capacitance and conductance of lossy MOS devices. Due to discrepancies during processing, such as cleaning, an unwanted lossy dielectric layer is present in the oxide/semiconductor interface causing the measured capacitance in strong accumulation to be frequency dependent. The capacitance-voltage characteristics after correction are free from any frequency dispersion effect and give the actual oxide thickness in accumulation at all frequencies. Simulation of the measured capacitance-frequency curve was carried out using the model. The model was applied to SiO2/Si, SiO2/strained Si and GaO2/GaAs MOS capacitors.


Publication metadata

Author(s): Kwa KSK, Chattopadhyay S, Jankovic ND, Olsen SH, Driscoll LS, O'Neill AG

Publication type: Article

Publication status: Published

Journal: Semiconductor Science and Technology

Year: 2003

Volume: 18

Issue: 2

Pages: 82-87

Print publication date: 01/02/2003

ISSN (print): 0268-1242

ISSN (electronic): 1361-6641

Publisher: Institute of Physics Publishing Ltd.

URL: http://dx.doi.org/10.1088/0268-1242/18/2/303

DOI: 10.1088/0268-1242/18/2/303


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