Browse by author
Lookup NU author(s): Dr Kelvin Kwa,
Dr Sanatan Chattopadhyay,
Dr Nebojsa Jankovic Professor,
Dr Sarah Olsen,
Professor Anthony O'Neill
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
A capacitance model is developed and a correction formula is derived to reconstruct the intrinsic oxide capacitance value from measured capacitance and conductance of lossy MOS devices. Due to discrepancies during processing, such as cleaning, an unwanted lossy dielectric layer is present in the oxide/semiconductor interface causing the measured capacitance in strong accumulation to be frequency dependent. The capacitance-voltage characteristics after correction are free from any frequency dispersion effect and give the actual oxide thickness in accumulation at all frequencies. Simulation of the measured capacitance-frequency curve was carried out using the model. The model was applied to SiO2/Si, SiO2/strained Si and GaO2/GaAs MOS capacitors.
Author(s): Kwa KSK, Chattopadhyay S, Jankovic ND, Olsen SH, Driscoll LS, O'Neill AG
Publication type: Article
Publication status: Published
Journal: Semiconductor Science and Technology
Print publication date: 01/02/2003
ISSN (print): 0268-1242
ISSN (electronic): 1361-6641
Publisher: Institute of Physics Publishing Ltd.
Altmetrics provided by Altmetric