Publications by Luke Driscoll - ePrints

Browsing publications by Luke Driscoll.

Newcastle Authors	Title	Year
Goutan Dalapati Dr Sanatan Chattopadhyay Luke Driscoll Professor Anthony O'Neill Dr Kelvin Kwa et al.	Extraction and modelling of strained-Si MOSFET parameters using small signal channel conductance method	2006
Goutan Dalapati Dr Sanatan Chattopadhyay Luke Driscoll Professor Anthony O'Neill Dr Kelvin Kwa et al.	Extraction of strained-Si metal-oxide-semiconductor field-effect transistor parameters using small signal channel conductance method	2006
Goutan Dalapati Dr Kelvin Kwa Dr Sarah Olsen Dr Sanatan Chattopadhyay Professor Anthony O'Neill et al.	Thermal oxidation of strained-Si: impact of strained-Si thickness and Ge on Si/SiO2 interface	2006
Dr Sarah Olsen Professor Anthony O'Neill Dr Sanatan Chattopadhyay Dr Kelvin Kwa Luke Driscoll et al.	Doubling speed using strained Si/SiGe CMOS technology	2005
Dr Kelvin Kwa Dr Sarah Olsen Professor Anthony O'Neill Dr Sanatan Chattopadhyay Goutan Dalapati et al.	Fowler-Nordheim tunnelling in strained Si/SiGe MOS devices: impact of cross-hatching and nanoscale roughness	2005
Dr Sarah Olsen Luke Driscoll Dr Kelvin Kwa Dr Sanatan Chattopadhyay Professor Anthony O'Neill et al.	High performance strained Si.SiGe n-channel MOSFETs: impact of alloy composition and layer architecture	2005
Dr Sarah Olsen Professor Anthony O'Neill Dr Piotr Dobrosz Professor Steve Bull Luke Driscoll et al.	Study of strain relaxation in Si/SiGe metal-oxide-semiconductor field-effect transistors	2005
Dr Sarah Olsen Dr Kelvin Kwa Luke Driscoll Dr Sanatan Chattopadhyay Professor Anthony O'Neill et al.	Design, fabrication and characterisation of strained Si/SiGe MOS transistors	2004
Dr Sarah Olsen Professor Anthony O'Neill Dr Sanatan Chattopadhyay Dr Kelvin Kwa Luke Driscoll et al.	Evaluation of strained Si/SiGe material for high performance CMOS	2004
Dr Sarah Olsen Professor Anthony O'Neill Dr Sanatan Chattopadhyay Dr Kelvin Kwa Luke Driscoll et al.	Evaluation of strained Si/SiGe material for high performance CMOS	2004
Luke Driscoll Dr Sarah Olsen Dr Sanatan Chattopadhyay Professor Anthony O'Neill Dr Kelvin Kwa et al.	Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters	2004
Luke Driscoll Dr Sarah Olsen Dr Sanatan Chattopadhyay Professor Anthony O'Neill Dr Kelvin Kwa et al.	Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters	2004
Luke Driscoll Dr Sarah Olsen Dr Sanatan Chattopadhyay Professor Anthony O'Neill Dr Kelvin Kwa et al.	Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters	2004
Dr Sarah Olsen Professor Anthony O'Neill Luke Driscoll Dr Sanatan Chattopadhyay Dr Kelvin Kwa et al.	Optimization of alloy composition for high-performance strained-Si-SiGe N-channel MOSFETs	2004
Dr Sarah Olsen Dr Kelvin Kwa Dr Sanatan Chattopadhyay Luke Driscoll Professor Anthony O'Neill et al.	Strained Si/SiGe n-channel MISFETs	2004
Dr Sarah Olsen Professor Anthony O'Neill Dr Sanatan Chattopadhyay Luke Driscoll Dr Kelvin Kwa et al.	Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs	2004
Dr Sarah Olsen Professor Anthony O'Neill Professor Steve Bull Dr Sanatan Chattopadhyay Dr Kelvin Kwa et al.	Thermal oxidation of strained Si/SiGe: impact of surface morphology and effect on MOS devices	2004
Dr Kelvin Kwa Dr Sanatan Chattopadhyay Dr Nebojsa Jankovic Professor Dr Sarah Olsen Luke Driscoll et al.	A model for capacitance reconstruction from measured lossy MOS capacitance-voltage characteristics	2003
Dr Sanatan Chattopadhyay Dr Kelvin Kwa Dr Sarah Olsen Luke Driscoll Professor Anthony O'Neill et al.	Capacitance - Voltage Characterization of Strained Si/SiGe Multiple Heterojunction Capacitors as a Tool for Heterojunction Metal Oxide Semiconductor Field Effect Transistor Channel Design	2003
Dr Sanatan Chattopadhyay Dr Kelvin Kwa Dr Sarah Olsen Luke Driscoll Professor Anthony O'Neill et al.	C-V characterization of strained Si/SiGe multiple heterojunction capacitors as a tool for heterojunction MOSFET channel design	2003
Dr Sarah Olsen Luke Driscoll Dr Kelvin Kwa Dr Sanatan Chattopadhyay Professor Anthony O'Neill et al.	High performance strained Si.SiGe NMOSFETs using a novel CMOS architecture	2003
Dr Sarah Olsen Luke Driscoll Dr Kelvin Kwa Dr Sanatan Chattopadhyay Professor Anthony O'Neill et al.	High performance strained Si/SiGe n-channel MOSFETs: impact of alloy composition and layer architecture	2003
Dr Sarah Olsen Luke Driscoll Dr Kelvin Kwa Dr Sanatan Chattopadhyay Professor Anthony O'Neill et al.	High performance strained Si/SiGe nMOSFETs using a novel CMOS architecture	2003
Dr Sarah Olsen Professor Anthony O'Neill Luke Driscoll Dr Kelvin Kwa Dr Sanatan Chattopadhyay et al.	High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture	2003
Professor Anthony O'Neill Dr Sanatan Chattopadhyay Dr Kelvin Kwa Luke Driscoll Professor Steve Bull et al.	Impact of Virtual Substrate Ge Composition on Strained Si MOSFET Performance	2003
Dr Sarah Olsen Professor Anthony O'Neill Dr Sanatan Chattopadhyay Dr Kelvin Kwa Luke Driscoll et al.	Impact of virtual substrate Ge composition on strained Si MOSFET performance	2003
Dr Sarah Olsen Professor Anthony O'Neill Dr Sanatan Chattopadhyay Dr Kelvin Kwa Luke Driscoll et al.	Impact of virtual substrate growth on high performance strained Si/SiGe double quantum well metal-oxide-semiconductor field-effect transistors	2003
Dr Sarah Olsen Professor Anthony O'Neill Dr Sanatan Chattopadhyay Luke Driscoll Dr Kelvin Kwa et al.	N-MOSFET performance in single and dual channel strained Si/SiGe CMOS architectures	2003
Dr Kelvin Kwa Dr Sanatan Chattopadhyay Dr Sarah Olsen Luke Driscoll Professor Anthony O'Neill et al.	Optimisation of channel thickness in strained Si/SiGe MOSFETs	2003
Dr Kelvin Kwa Dr Sanatan Chattopadhyay Dr Sarah Olsen Luke Driscoll Professor Anthony O'Neill et al.	Optimisation of Channel Thickness in Strained Si/SiGe MOSFETs	2003
Dr Kelvin Kwa Dr Sanatan Chattopadhyay Dr Sarah Olsen Luke Driscoll Professor Anthony O'Neill et al.	Optimisation of channel thickness in strained Si/SiGe MOSFETs	2003