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C-V characterization of strained Si/SiGe multiple heterojunction capacitors as a tool for heterojunction MOSFET channel design

Lookup NU author(s): Dr Sanatan Chattopadhyay, Dr Kelvin Kwa, Dr Sarah Olsen, Luke Driscoll, Professor Anthony O'Neill

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Abstract

Capacitance-voltage (C-V) characteristics are used to investigate double heterojunction strained Si/SiGe MOS capacitors. Structures of this type potentially form the channels of CMOS devices based on the strained Si/SiGe material system. The technique represents a fast and non-destructive method to determine important characteristics such as layer thicknesses, threshold voltages and band offsets. Moreover, it contributes to the design of optimum heterostructures for CMOS. Experimental C-V data are compared with simulation and complementary results including SIMS and TEM to confirm the accuracy of the technique.

Publication metadata

Author(s): Chattopadhyay S, Kwa KSK, Olsen SH, Driscoll LS, O'Neill AG

Publication type: Article

Publication status: Published

Journal: Semiconductor Science and Technology

Year: 2003

Volume: 18

Issue: 8

Pages: 738-744

Print publication date: 01/08/2003

ISSN (print): 0268-1242

ISSN (electronic): 1361-6641

Publisher: Institute of Physics Publishing Ltd.

URL: http://dx.doi.org/10.1088/0268-1242/18/8/304

DOI: 10.1088/0268-1242/18/8/304

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