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Impact of virtual substrate growth on high performance strained Si/SiGe double quantum well metal-oxide-semiconductor field-effect transistors

Lookup NU author(s): Dr Sarah Olsen, Professor Anthony O'Neill, Dr Sanatan Chattopadhyay, Dr Kelvin Kwa, Luke Driscoll, Dr David Robbins

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Abstract

The effect of virtual substrate growth on high performance strained Si/ SiGe double quantum well metal oxide semiconductor field-effect transistors was discussed. The epitaxial growth was performed by low pressure chemical vapor deposition (LPCVD) at two different temperatures. It was shown that the higher degree of surface roughness and higher defect density of the low temperature LPCVD material limits the performance enhancements achievable due to the increased carrier scattering. It was suggested that by incorporating strain-compensated Si/SiGe layers into conventional Si MOSFETs, even degraded SiGe material can offer performance advantages over bulk Si devices.

Publication metadata

Author(s): Olsen SH, O'Neill AG, Chattopadhyay S, Kwa KSK, Driscoll LS, Zhang J, Robbins DJ, Higgs V

Publication type: Article

Publication status: Published

Journal: Journal of Applied Physics

Year: 2003

Volume: 94

Issue: 10

Pages: 6855-6863

ISSN (print): 0021-8979

ISSN (electronic): 1520-8850

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.1619197

DOI: 10.1063/1.1619197

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