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Lookup NU author(s): Dr Sarah Olsen,
Professor Anthony O'Neill,
Dr Sanatan Chattopadhyay,
Dr Kelvin Kwa
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On-state and off-state performance of strained-Si-SiGe n-channel MOSFETs have been investigated as a function of SiGe virtual substrate alloy composition. Performance gains in terms of on-state drain current and maximum transconductance of up to 220% are demonstrated for strained-Si-SiGe devices compared with Si controls. Device performance is found to peak using a virtual substrate composition of Si0.75 Ge0.25. MOSFET fabrication used high thermal budget processing and good gate oxide quality has been maintained for virtual substrates having Ge compositions up to 30%. Off-state characteristics are found to be more sensitive to strain relaxation than on-state characteristics. © 2004 IEEE.
Author(s): Olsen SH, O'Neill AG, Driscoll LS, Chattopadhyay S, Kwa KSK, Waite AM, Tang YT, Evans AGR, Zhang J
Publication type: Article
Publication status: Published
Journal: IEEE Transactions on Electron Devices
ISSN (print): 0018-9383
ISSN (electronic): 1557-9646
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