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Optimization of alloy composition for high-performance strained-Si-SiGe N-channel MOSFETs

Lookup NU author(s): Dr Sarah Olsen, Professor Anthony O'Neill, Luke Driscoll, Dr Sanatan Chattopadhyay, Dr Kelvin Kwa

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Abstract

On-state and off-state performance of strained-Si-SiGe n-channel MOSFETs have been investigated as a function of SiGe virtual substrate alloy composition. Performance gains in terms of on-state drain current and maximum transconductance of up to 220% are demonstrated for strained-Si-SiGe devices compared with Si controls. Device performance is found to peak using a virtual substrate composition of Si0.75 Ge0.25. MOSFET fabrication used high thermal budget processing and good gate oxide quality has been maintained for virtual substrates having Ge compositions up to 30%. Off-state characteristics are found to be more sensitive to strain relaxation than on-state characteristics. © 2004 IEEE.


Publication metadata

Author(s): Olsen SH, O'Neill AG, Driscoll LS, Chattopadhyay S, Kwa KSK, Waite AM, Tang YT, Evans AGR, Zhang J

Publication type: Article

Publication status: Published

Journal: IEEE Transactions on Electron Devices

Year: 2004

Volume: 51

Issue: 7

Pages: 1156-1163

ISSN (print): 0018-9383

ISSN (electronic): 1557-9646

Publisher: IEEE

URL: http://dx.doi.org/10.1109/TED.2004.830656

DOI: 10.1109/TED.2004.830656


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