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Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs

Lookup NU author(s): Dr Sarah OlsenORCiD, Professor Anthony O'Neill, Dr Sanatan Chattopadhyay, Luke Driscoll, Dr Kelvin Kwa

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Abstract

Results comparing strained-Si-SiGe n-channel MOSFET performance of single-and dual-surface channel devices fabricated using 15% Ge content SiGe virtual substrates are presented. Device fabrication used high thermal budget processes and virtual substrates were not polished. Mobility enhancement factors exceeding 1.6 are demonstrated for both single-and dual-channel device architectures compared with bulk-Si control devices. Single-channel devices exhibit improved gate oxide quality, and larger mobility enhancements, at higher vertical effective fields compared with the dual-channel strain-compensated devices. The compromised performance enhancements of the dual-channel devices are attributed to greater interface roughness and increased Ge diffusion resulting from the Si0.7Ge0.3 buried channel layer. © 2004 IEEE.

Publication metadata

Author(s): Olsen SH, O'Neill AG, Chattopadhyay S, Driscoll LS, Kwa KSK, Norris DJ, Cullis AG, Paul DJ

Publication type: Article

Publication status: Published

Journal: IEEE Transactions on Electron Devices

Year: 2004

Volume: 51

Issue: 8

Pages: 1245-1253

Print publication date: 01/08/2004

Date deposited: 09/12/2010

ISSN (print): 0018-9383

ISSN (electronic): 1557-9646

Publisher: IEEE

URL: http://dx.doi.org/10.1109/TED.2004.830652

DOI: 10.1109/TED.2004.830652

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